We currently have the following opportunities within the Centre:
Senior Technician
As a Senior Technician you will provide technical support for the Centre for GaN Materials and Devices (CGMD) under the direction of Prof. Tao Wang. The CGMD covers a wide range of research topics on III-nitride semiconductor materials and Devices. The CGMD is equipped with two advanced Metal-organic vapour phase epitaxy (MOVPE) systems, a large number of material characterisation systems and extensive device testing and fabrication facilities of a high standard for the advanced research of III-nitrides.
You will join the CGMD located at the University’s North Campus, where all the research facilities in the CGMD are installed. As a Senior Technician you will perform a wide range of daily technical support (mechanical, electrical, gases and chemicals), regular facility maintenance, modification of existing facilities and installation of new facilities in order to ensure that all the research facilities are fully operational in an efficient and timely manner. The senior technician will report to the Director of the CGMD or the Departmental Technical Manager.
To find out more visit The University of Sheffield jobs website and search for job reference number: UOS019203
Research Associate in III-nitride Materials and Devices
You will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve next generation semi-polar and non-polar III-nitride based Photonics and Electronics using advanced MOVPE overgrowth techniques, which will be characterised by a number of advanced optical and structure characterisation systems. Candidates are sought who have a strong scientific background in III-nitride based semiconductors, with a PhD in semiconductor material growth. Significant experience in advanced MOVPE overgrowth on patterned substrates and structural and optical characterisation of III-nitride semiconductors is essential
This post is fixed-term (potentially can be further extended) with an end date of 31 October 2020 with a start date as soon as possible. Closing date 8th June 2018
To find out more visit The University of Sheffield jobs website and search for job reference number: UOS019189
Fully-funded PhD studentship opportunities (full time) – III-nitride semiconductors and devices.
Applications are invited for 2 fully-funded 3.5 year PhD studentships to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors.
Project description
Both studentship holders will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced epitaxial growth and novel device fabrication of the integrated devices are essential for the project. She/he will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.
The studentships are based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.
Academic requirements
This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a strong background in semiconductor materials & Physics. Candidates from a Physics Department are particularly welcome. A first-degree of class 1 or 2:1 class or its international equivalent is required.
Funding notes
Both the PhD studentships are fully funded for 3.5 years and are open to applicants of UK/EU nationality (However, non-UK/EU candidates in an exceptional case will be considered as well) who can meet the university’s entrance requirements. Funding covers international tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.
The studentships can start at the earliest opportunity.
Application and enquiries
Interested applicants should apply by submitting their CV and covering letter to Professor Tao Wang or Ms Katherine Greenacre;
For more information on post graduate research in EEE and the application process visit http://www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Professor Tao Wang.
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We are always pleased to receive enquiries about other PhD studentship opportunities.