Research Associate in III-Nitride Semiconductors and Devices
The post holder will work closely with a large number of collaborators from other universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced MOVPE growth, the fabrication of novel patterned substrates and the design and fabrication of the integrated devices will be the key elements. You will need to prepare and present results regularly, and will help to co-ordinate progress meetings. You will also need to publish articles in high-profile journals as well as attend project progress meetings and international/domestic conferences.
Candidates should have a strong scientific background in III-nitride based semiconductor physics, with a PhD (or be close to completion) in semiconductor materials and device fabrication (or have equivalent experience). Experience in optical and electronic device fabrication, in particular integrated devices, and skill in the fabrication of patterned substrates, are equally essential.
Closing date: 11th September. Find out more and submit application.
Job Reference Number: UOS023533
For informal enquiries please contact Professor Tao Wang.
Fully-funded PhD Opportunity
Project: III-nitride semiconductors and devices
Open to UK/EU students for full-time study.
For more details see:
Fully-funded PhD studentship – III-nitride semiconductors and devices
To find out more please contact Professor Tao Wang.
Part-funded PhD Opportunities at the Centre for GaN Materials and Devices
Project: Fabrication and characterisation of III-nitride MicroLEDs for next generation display.
These part-funded PhD opportunities are open to UK/EU and international students for full-time study. Applicants for part-funded opportunities must demonstrate that they can provide necessary extra funds to complete their studies.
For more details see:
Design and Fabrication of Full Colour Micro-display with a High Response Speed using Micro-LED
To find out more please contact Professor Tao Wang.