We currently have the following opportunities within the Centre:
Fully-funded PhD studentship – Transfer printing of novel III-nitride based hybrid optoelectronics.
Project Description
The III-nitride materials including GaN remain a rapidly growing field with applications across solid state lighting, UV and visible LEDs and lasers, power and RF electronics. Transfer printing is a key emerging technology in the field of semiconductor device fabrication allowing the fabrication of devices consisting of many different materials with dissimilar properties. In this project, novel GaN based optoelectronic devices will be developed utilizing transfer printing techniques to stack III-nitride materials on non-native substrates and combine these III-nitride semiconductor materials with a range of other functional materials including organic light emitters.
This approach will allow the strengths of different materials systems to be exploited and combined to produce high performance light emitting devices such as LEDs and lasers emitting over the full visible spectrum.
Your work will focus on developing and applying transfer printing techniques appropriate for III-nitrides and the complimentary hybrid materials. This will also involve a range of device fabrication techniques, working in the cleanroom and characterization of the hybrid material devices fabricated.
The studentship is based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D. students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.
Academic requirements
This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a background in semiconductor materials & physics. Applicants should hold a minimum of a UK Honours Degree at 2:1 or its international equivalent. Candidates from a Physics Department are particularly welcome.
Application and enquiries
Interested applicants should apply by submitting their CV and covering letter to Dr Rick Smith or Ms Katherine Greenacre;
For more information on post graduate research in EEE and the application process visit http://www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Dr Rick Smith.
Funding Notes
The studentship is fully funded for 3.5 years. Applicants must have UK Home Fee status, or EU citizenship and been resident in the UK for at least three years prior to the start of the project. Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.
Fully-funded PhD studentship opportunities (full time) – III-nitride semiconductors and devices.
Applications are invited for 2 fully-funded 3.5 year PhD studentships to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors.
Project description
Both studentship holders will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced epitaxial growth and novel device fabrication of the integrated devices are essential for the project. She/he will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.
The studentships are based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.
Academic requirements
This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a strong background in semiconductor materials & Physics. Candidates from a Physics Department are particularly welcome. A first-degree of class 1 or 2:1 class or its international equivalent is required.
Funding notes
Both the PhD studentships are fully funded for 3.5 years and are open to applicants of UK/EU nationality (However, non-UK/EU candidates in an exceptional case will be considered as well) who can meet the university’s entrance requirements. Funding covers international tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.
The studentships can start at the earliest opportunity.
Application and enquiries
Interested applicants should apply by submitting their CV and covering letter to Professor Tao Wang or Ms Katherine Greenacre;
For more information on post graduate research in EEE and the application process visit http://www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Professor Tao Wang.
—
We are always pleased to receive enquiries about other PhD studentship opportunities.