We currently have the following opportunities within the Centre:

Research Associate in III-nitride nano-lasers

For more information and to apply online please see:
https://jobs.shef.ac.uk/

Job reference number: UOS018071

Closing Date: 27th February 2018

The post holder will work closely with another UK University in order to achieve III-nitride electrically injected nanolasers in the visible spectral region with ultra-low threshold current density for further complex photonic integrated circuits. You will need to prepare and present results regularly, and will help to co-ordinate progress meetings. You will need to publish articles in high-profile journals, attend project progress meetings and present results at international/domestic conferences.

Candidates are sought who have a strong scientific background in III-nitride based semiconductor physics and fundamental semiconductor physics, with a PhD in semiconductor nano-device fabrication or equivalent experience. Significant experience in advanced fabrication of III-nitride laser diodes and advanced device characterisation of III-nitride laser diodes is essential.

This post is fixed term until 31 December 2019.

Fully funded PhD studentship – Hybrid Photonics – III-nitride based hybrid optoelectronic devices by transfer printing

Project Description

The III-nitride materials including GaN remain a rapidly growing field with applications across solid state lighting, UV and visible LEDs and lasers, power and RF electronics. Transfer printing is a key emerging technology in the field of semiconductor device fabrication allowing the building of devices consisting of many different materials with dissimilar properties. In this project, novel GaN based optoelectronic devices will be developed utilizing transfer printing techniques to stack III-nitride light emitters and combine these III-nitride semiconductor materials with a range of other functional materials including organic light emitters and quantum dots. These hybrid material devices will be printed into photonic structures such as micro-cavities to modify the coupling between the different materials within the devices.

This additive approach will allow the strengths of different materials systems to be exploited and combined to produce high performance light emitting devices such as LEDs and lasers emitting over the full visible spectrum.

Your work will focus on applying transfer printing techniques to build novel hybrid photonic devices, characterizing their behaviour and optimizing the design of the photonic structures . This will involve a range of device fabrication techniques, working in the cleanroom and optical characterization of the hybrid material devices fabricated.

The studentship is based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including Dr Rick Smith as an academic member of staff, a research administrator, research fellows and Ph.D. students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.
Academic requirements

This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a background in semiconductor materials & physics. Applicants should hold a minimum of a UK Honours Degree at 2:1 or its international equivalent.

Application and enquiries

Interested applicants should apply by submitting their CV and covering letter to Dr Rick Smith or Ms Katherine Greenacre;

For more information on post graduate research in EEE and the application process visit http://www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Dr Rick Smith.

Funding Notes
The studentship is fully funded for 3.5 years applicants must have UK Home Fee status, or EU citizenship and been resident in the UK for at least three years prior to the start of the project. Funding covers tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.


Fully-funded PhD studentship opportunities (full time) – III-nitride semiconductors and devices.

Applications are invited for 2 fully-funded 3.5 year PhD studentships to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors.

Project description

Both studentship holders will work closely with a large number of collaborators from other Universities and industrial partners in order to achieve integrated devices combining III-nitrides and other III-Vs on patterned substrates, where the advanced epitaxial growth and novel device fabrication of the integrated devices are essential for the project. She/he will need to prepare and present results regularly, and will need to publish articles in high-profile journals, attend project progress meetings and international/domestic conferences.

The studentships are based within the Centre for GaN Materials and Devices. Led by Professor Tao Wang the Centre currently has 22 team members including academic members of staff, a research administrator, research fellows and Ph.D students, and is equipped with two advanced III-nitride based MOVPE systems, comprehensive optical systems for advanced research on III-nitrides, and a number of facilities for device fabrication and device testing.

Academic requirements

This project will best suit a graduate in Physics, Materials or Electronic & Electrical Engineering with a strong background in semiconductor materials & Physics. Candidates from a Physics Department are particularly welcome. A first-degree of class 1 or 2:1 class or its international equivalent is required.

Funding notes

Both the PhD studentships are fully funded for 3.5 years and are open to applicants of UK/EU nationality (However, non-UK/EU candidates in an exceptional case will be considered as well) who can meet the university’s entrance requirements. Funding covers international tuition fees and a tax-free living allowance at the current EPSRC rate or equivalent.

The studentships can start at the earliest opportunity.

Application and enquiries

Interested applicants should apply by submitting their CV and covering letter to Professor Tao Wang or Ms Katherine Greenacre;

For more information on post graduate research in EEE and the application process visit http://www.sheffield.ac.uk/eee/pgr. Informal enquiries can be addressed to Professor Tao Wang.

We are always pleased to receive enquiries about other PhD studentship opportunities.