Academic staff

Professor Tao Wang

Director of the Centre for GaN Materials and Devices

Research interests:

  • MOCVD growth of III-nitride materials and devices
  • Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
  • III-nitride based solid-state lighting
  • Application of plasmonics in III-nitride optoelectronics
  • Application of photonics crystal in III-nitride optoelectronics
  • III-nitride Solar Cell
  • III-nitride optoelectronics for hydrogen generation

Dr Rick Smith

Lecturer

Research Interests

Focused on GaN related materials and devices, particularly optoelectronics.

  • Hybrid organic/inorganic optoelectronics
  • Non-radiative energy transfer processes in hybrid GaN/organic interfaces
  • High efficiency semi-polar GaN based materials, LEDs and LD structures
  • Optical characterization techniques of III-nitride materials and devices

Visiting academics

Professor Pallab Bhattacharya, Dr Jayanta Sarma

Dr Qiang Li

Visiting academic

Xi’an Jiaotong University
Research interest

  • UV-LED devices, Nanomaterial of metal oxide semiconductor

    Research staff

    Dr Jie Bai

    Research Associate

    Ph.D, University of Tokushima, Japan

    Research Interests

    • Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
    • III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
    • High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
    • Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

      Dr Yipin Gong

      Research Associate

      B.Eng, Electronic and Electrical Engineering, University of Sheffield
      Ph.D. Electronic and Electrical Engineering, University of Sheffield

      Research Interests

      • Growth of c-plane III-nitride based materials and LED-structure by MOCVD
      • Growth of non-polar and semi-polar III-nitride based materials by MOCVD
      • Study of optical properties of AlGaN

        Dr Xiang Yu

        Research Associate

        B.Eng, Electronic and Electrical Engineering, University of Sheffield

        Research Interests

        • Growth of semi-polar III-nitride materials by MOCVD

          Ph.D. students

          Mr Chenqi Zhu

          B.Sc, Electronic and Electrical Engineering, Shaanxi Normal University
          MSc, Electronic and Electrical Engineering, University of Sheffield

          Research interests:

          • Monolithic Integration and growth of Group 3-Nitrides on Si Substrate

            Mr Zohaib Ahmed

            BEng, Electronic and Electrical Engineering, University of Sheffield (2013)
            MSc, Semiconductor Photonics and Electronics, University of Sheffield (2015)

            Research interests

            • Nano/micro fabrication and characterisation of photoelectrodes for solar water splitting
            • Fabrication and characterisation of solar cells utlilising nanostructures

              Mr Volkan Esendag

              MEng Electronics and Nanotechnology, University of Leeds

              Research interests

              • Monolithic Integration of Group III-Nitrides on a Si Substrate

                Mr Peter Fletcher

                Research interests

                • Growth and growth related material characteristics, optical investigation on non-polar and semi-polar multi quantum wells
                • Optical investigation of non-polar and semi-polar nano-membranes using conductive etching approach

                  Mr Suneal Ghataora

                  B.Eng. Electronic and Electrical Engineering, The University of Sheffield

                  Research Interests

                  • Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

                    Mr Samuel Greenhalgh

                      Mr Ling Jiu

                      MSc, Semiconductor Photonics and Engineering, University of Sheffield

                      Research Interests

                      • Nanotechnology, including fabrication of templates for semi-/non-polar III-Nitride overgrowth.
                      • Structural and optical characterisation of non-polar III-Nitride materials.

                        Mr Nicolas Poyiatzis

                        MEng Electrical Engineering, The University of Sheffield

                        Research interests:

                        • Fabrication and characterization of semi-polar III-Nitride based opto-electronics

                          Mr Shuoheng Shen

                          B.Sc, Optical Information Science and Technology, University of Shanghai for Science and Technology
                          MSc, Semiconductor Photonics and Engineering, University of Sheffield

                          Research Interests

                          • Growth of Non-polar and Semi-polar III-nitride based materials on silicon substrates by MOCVD.

                            Mr Ye Tian

                            B.Sc, Electrical Engineering, University of Liverpool
                            MSc, Semiconductor Photonics and Engineering, University of Sheffield

                            Research Interests:

                            • The growth of nitrogen-polar III-nitride based materials by MOCVD.
                            • Investigation of nitrogen-polar nano-membranes using conductive etching approach.

                              Mr Xuanming Zhao

                              2014-2015 Graduate from University of Sheffield (Msc)

                                Centre administrator

                                Katherine Greenacre