Academic staff

Professor Tao Wang

Director of the Centre for GaN Materials and Devices

Research interests:

  • MOCVD growth of III-nitride materials and devices
  • Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
  • III-nitride based solid-state lighting
  • Application of plasmonics in III-nitride optoelectronics
  • Application of photonics crystal in III-nitride optoelectronics
  • III-nitride Solar Cell
  • III-nitride optoelectronics for hydrogen generation

Dr Rick Smith

Lecturer

Research Interests

Focused on GaN related materials and devices, particularly optoelectronics.

  • Hybrid organic/inorganic optoelectronics
  • Non-radiative energy transfer processes in hybrid GaN/organic interfaces
  • High efficiency semi-polar GaN based materials, LEDs and LD structures
  • Optical characterization techniques of III-nitride materials and devices

Visiting academics

Professor Pallab Bhattacharya and Dr Jayanta Sarma


Research staff

Dr Modestos Athanasiou

Research Associate

B.Eng, Electronic and Electrical Engineering, University of Sheffield.

Research Interests

  • Fabrication and characterisation of nanostructure devices using nano-sphere lithography technique, for high-efficiency LEDs and LD devices.

    Dr Jie Bai

    Research Associate

    Ph.D, University of Tokushima, Japan

    Research Interests

    • Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
    • III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
    • High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
    • Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

      Dr Duc Dinh

      Research Associate
      • B.Eng, Electronics and Telecommunications Engineering, Hanoi University of Technology, Vietnam
      • MSc, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, South Korea
      • PhD, Institute of Solid State Physics, Technical University of Berlin, Germany

      Research Interests:

      Growth of III-Nitride semiconductors and LED structures using MOCVD Optical characterization of nitride materials

        Dr Yipin Gong

        Research Associate

        B.Eng, Electronic and Electrical Engineering, University of Sheffield
        Ph.D. Electronic and Electrical Engineering, University of Sheffield

        Research Interests

        • Growth of c-plane III-nitride based materials and LED-structure by MOCVD
        • Growth of non-polar and semi-polar III-nitride based materials by MOCVD
        • Study of optical properties of AlGaN

          Dr Yaonan Hou

          Research Associate

          Ph.D, Institute of Physics, Chinese Academy of Sciences

          Research Interests

          • Low dimensional surface plasmon light sources based on III-nitride semiconductors
          • Fabrication and characterization of III-nitride nanostructures
          • Optoelectronic devices based on III-nitride semiconductors, specifically LDs and LEDs
          • Growth of III-nitride materials on Si substrate

            Dr Kun Xing

            Research Associate

            B.Eng, Electronic and Electrical Engineering, University of Sheffield

            Research Interests

            • Growth of c-plane, non-polar and semi-polar III-nitride based materials by MOCVD
            • Overgrowth of a-plane GaN on non-polar nanorod templates by MOCVD
            • Optical properties of a-plane InGaN/GaN quantum well structures grown on the overgrown a-plane GaN, including the study of its relevant LED device structure and stimulated emission

              Dr Xiang Yu

              Research Associate

              B.Eng, Electronic and Electrical Engineering, University of Sheffield

              Research Interests

              • Growth of semi-polar III-nitride materials by MOCVD

                Research technician

                Mr Paul Haines

                  Ph.D. students

                  Mr Zohaib Ahmed

                    Mr Suneal Ghataora

                    B.Eng. Electronic and Electrical Engineering, The University of Sheffield

                    Research Interests

                    • Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

                      Mr Fernando Guzmann

                      Bachelor of Electronic and Communications Engineering at Tecnológico de Monterrey, CCM
                      MsC Advanced Technology at IPN

                      Research Interests

                      • Optoelectronic device fabrication
                      • III-nitride LEDs
                      • Photonic crystals

                        Mr Ling Jiu

                          Mr Zhi Li

                            Mr Nicolas Poyiatzis

                              Mr Shuoheng Shen

                                Mr Yun Zhang

                                B.Sc, M.Sc. Nanjing University

                                Research Interests:

                                • Optical and micro-structural investigation of non-polar and semi-polar III-nitride materials by multiple characterization methods involving photoluminescence (PL), photoluminescence¬†excitation (PLE), time-resolved PL, and transmission electron microscopy (TEM)

                                  Mr Xuanming Zhao

                                  2014-2015 Graduate from University of Sheffield (Msc)

                                    Centre administrator

                                    Katherine Greenacre