Academic staff

Professor Tao Wang

Director of the Centre for GaN Materials and Devices

Research interests:

  • MOCVD growth of III-nitride materials and devices
  • Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
  • III-nitride based solid-state lighting
  • Application of plasmonics in III-nitride optoelectronics
  • Application of photonics crystal in III-nitride optoelectronics
  • III-nitride Solar Cell
  • III-nitride optoelectronics for hydrogen generation

Dr Rick Smith

Lecturer

Research Interests

Focused on GaN related materials and devices, particularly optoelectronics.

  • Hybrid organic/inorganic optoelectronics
  • Non-radiative energy transfer processes in hybrid GaN/organic interfaces
  • High efficiency semi-polar GaN based materials, LEDs and LD structures
  • Optical characterization techniques of III-nitride materials and devices

Visiting academics

Professor Pallab Bhattacharya, Dr Jayanta Sarma

Dr Qiang Wang

Visiting academic

Qilu University of Technology

Research interests:

  • Nano/micro fabrication and characterisation of III-nitride based LED

    Dr Yu Lu

    Visiting academic

    Anhui University of Technology

    Research interests:

    • III-nitride based LED and LD
    • HVPE growth of GaN substrate

      Research staff

      Dr Jie Bai

      Research Associate

      Ph.D, University of Tokushima, Japan

      Research Interests

      • Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
      • III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
      • High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
      • Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

        Dr Yuefei Cai

        Research Associate

        Ph.D., Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, January 2018
        M.Phil., Physical Electronics, Harbin Institute of Technology, China, July 2013
        B.Sc., Electronic Science and Technology, Harbin Institute of Tehnology, China, July 2011

        Research Interests:

        • Monolithic integration of III-nitride electronic and optical devices;
        • Design, fabrication and characterization of III-nitride devices (GaN HEMT, LED, Photodiode, etc.)

          Dr Sheng Jiang

          Research Associate

          PhD in Electronic and Electrical Engineering, University of Sheffield, UK, 2018

          MSc in Electronic and Electrical Engineering, University of Sheffield, UK, 2013

          BEng in Automatic Control and Electrical Systems Engineering, East China University of Science and Technology (ECUST), Shanghai, China, 2011

          Research Interests:

          • GaN based high-voltage high-frequency transistors for power switching applications
          • GaN based integrated circuits and systems

            PhD students

            Mr Zohaib Ahmed

            BEng, Electronic and Electrical Engineering, University of Sheffield (2013)
            MSc, Semiconductor Photonics and Electronics, University of Sheffield (2015)

            Research interests

            • Nano/micro fabrication and characterisation of photoelectrodes for solar water splitting
            • Fabrication and characterisation of solar cells utlilising nanostructures

              Mr Volkan Esendag

              MEng Electronics and Nanotechnology, University of Leeds

              Research interests

              • Monolithic Integration of Group III-Nitrides on a Si Substrate

                Mr Peng Feng

                BSc, Applied Physics, Qingdao University of Technology
                MSc, Semiconductor Photonics and Electronics, University of Sheffield

                Research interests:

                • Growth and characterisation of monolithically integrated III-nitride micro-LED arrays.

                  Mr Peter Fletcher

                  Research interests

                  • Growth and growth related material characteristics, optical investigation on non-polar and semi-polar multi quantum wells
                  • Optical investigation of non-polar and semi-polar nano-membranes using conductive etching approach

                    Mr Suneal Ghataora

                    B.Eng. Electronic and Electrical Engineering, The University of Sheffield

                    Research Interests

                    • Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

                      Mr Jack Haggar

                      Research summary:

                      • Fabrication and characterisation of III-Nitride photonics and electronics for visible light wireless communications.

                        Mr Ling Jiu

                        MSc, Semiconductor Photonics and Engineering, University of Sheffield

                        Research Interests

                        • Nanotechnology, including fabrication of templates for semi-/non-polar III-Nitride overgrowth.
                        • Structural and optical characterisation of non-polar III-Nitride materials.

                          Mr Nicolas Poyiatzis

                          MEng Electrical Engineering, The University of Sheffield

                          Research interests:

                          • Fabrication and characterization of semi-polar III-Nitride based opto-electronics

                            Mr Shuoheng Shen

                            B.Sc, Optical Information Science and Technology, University of Shanghai for Science and Technology
                            MSc, Semiconductor Photonics and Engineering, University of Sheffield

                            Research Interests

                            • Growth of Non-polar and Semi-polar III-nitride based materials on silicon substrates by MOCVD.

                              Mr Ye Tian

                              B.Sc, Electrical Engineering, University of Liverpool
                              MSc, Semiconductor Photonics and Engineering, University of Sheffield

                              Research Interests:

                              • The growth of nitrogen-polar III-nitride based materials by MOCVD.
                              • Investigation of nitrogen-polar nano-membranes using conductive etching approach.

                                Mr Xuanming Zhao

                                2014-2015 Graduate from University of Sheffield (Msc)

                                Research Interests

                                • Growth of Semi-polar III-nitride based materials on silicon substrates by MOCVD and Template Fabrication.

                                  Mr Chenqi Zhu

                                  B.Sc, Electronic and Electrical Engineering, Shaanxi Normal University
                                  MSc, Electronic and Electrical Engineering, University of Sheffield

                                  Research interests:

                                  • Monolithic Integration and growth of Group 3-Nitrides on Si Substrate

                                    Technical staff

                                    Stephen Atkin

                                    Senior Technician

                                    MIScT

                                      Centre administrator

                                      Katherine Greenacre