Academic staff

Professor Tao Wang

Director of the Centre for GaN Materials and Devices

Research interests:

  • MOCVD growth of III-nitride materials and devices
  • Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
  • III-nitride based solid-state lighting
  • Application of plasmonics in III-nitride optoelectronics
  • Application of photonics crystal in III-nitride optoelectronics
  • III-nitride Solar Cell
  • III-nitride optoelectronics for hydrogen generation

Dr Rick Smith

Lecturer

Research Interests

Focused on GaN related materials and devices, particularly optoelectronics.

  • Hybrid organic/inorganic optoelectronics
  • Non-radiative energy transfer processes in hybrid GaN/organic interfaces
  • High efficiency semi-polar GaN based materials, LEDs and LD structures
  • Optical characterization techniques of III-nitride materials and devices

Visiting academics

Professor Pallab Bhattacharya, Dr Jayanta Sarma

Dr Qiang Li

Visiting academic

Xi’an Jiaotong University

Research interests:

  • UV-LED devices, Nanomaterial of metal oxide semiconductor

    Dr Yu Lu

    Visiting academic

    Anhui University of Technology

    Research interests:

    • III-nitride based LED and LD
    • HVPE growth of GaN substrate

      Research staff

      Dr Jie Bai

      Research Associate

      Ph.D, University of Tokushima, Japan

      Research Interests

      • Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
      • III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
      • High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
      • Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

        Dr Yuefei Cai

        Research Associate

        Ph.D., Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, January 2018
        M.Phil., Physical Electronics, Harbin Institute of Technology, China, July 2013
        B.Sc., Electronic Science and Technology, Harbin Institute of Tehnology, China, July 2011

        Research Interests:

        • Monolithic integration of III-nitride electronic and optical devices;
        • Design, fabrication and characterization of III-nitride devices (GaN HEMT, LED, Photodiode, etc.)

          Dr Yipin Gong

          Research Associate

          B.Eng, Electronic and Electrical Engineering, University of Sheffield
          Ph.D. Electronic and Electrical Engineering, University of Sheffield

          Research Interests

          • Growth of c-plane III-nitride based materials and LED-structure by MOCVD
          • Growth of non-polar and semi-polar III-nitride based materials by MOCVD
          • Study of optical properties of AlGaN

            Dr Xiang Yu

            Research Associate

            B.Eng, Electronic and Electrical Engineering, University of Sheffield

            Research Interests

            • Growth of semi-polar III-nitride materials by MOCVD

              Ph.D. students

              Mr Chenqi Zhu

              B.Sc, Electronic and Electrical Engineering, Shaanxi Normal University
              MSc, Electronic and Electrical Engineering, University of Sheffield

              Research interests:

              • Monolithic Integration and growth of Group 3-Nitrides on Si Substrate

                Mr Zohaib Ahmed

                BEng, Electronic and Electrical Engineering, University of Sheffield (2013)
                MSc, Semiconductor Photonics and Electronics, University of Sheffield (2015)

                Research interests

                • Nano/micro fabrication and characterisation of photoelectrodes for solar water splitting
                • Fabrication and characterisation of solar cells utlilising nanostructures

                  Mr Volkan Esendag

                  MEng Electronics and Nanotechnology, University of Leeds

                  Research interests

                  • Monolithic Integration of Group III-Nitrides on a Si Substrate

                    Mr Peter Fletcher

                    Research interests

                    • Growth and growth related material characteristics, optical investigation on non-polar and semi-polar multi quantum wells
                    • Optical investigation of non-polar and semi-polar nano-membranes using conductive etching approach

                      Mr Suneal Ghataora

                      B.Eng. Electronic and Electrical Engineering, The University of Sheffield

                      Research Interests

                      • Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

                        Mr Samuel Greenhalgh

                        MPhys, The University of Sheffield

                        Research interests

                        • Nanoporous GaN and microdisk lasers.

                          Mr Ling Jiu

                          MSc, Semiconductor Photonics and Engineering, University of Sheffield

                          Research Interests

                          • Nanotechnology, including fabrication of templates for semi-/non-polar III-Nitride overgrowth.
                          • Structural and optical characterisation of non-polar III-Nitride materials.

                            Mr Nicolas Poyiatzis

                            MEng Electrical Engineering, The University of Sheffield

                            Research interests:

                            • Fabrication and characterization of semi-polar III-Nitride based opto-electronics

                              Mr Shuoheng Shen

                              B.Sc, Optical Information Science and Technology, University of Shanghai for Science and Technology
                              MSc, Semiconductor Photonics and Engineering, University of Sheffield

                              Research Interests

                              • Growth of Non-polar and Semi-polar III-nitride based materials on silicon substrates by MOCVD.

                                Mr Ye Tian

                                B.Sc, Electrical Engineering, University of Liverpool
                                MSc, Semiconductor Photonics and Engineering, University of Sheffield

                                Research Interests:

                                • The growth of nitrogen-polar III-nitride based materials by MOCVD.
                                • Investigation of nitrogen-polar nano-membranes using conductive etching approach.

                                  Mr Xuanming Zhao

                                  2014-2015 Graduate from University of Sheffield (Msc)

                                  Research Interests

                                  • Growth of Semi-polar III-nitride based materials on silicon substrates by MOCVD and Template Fabrication.

                                    Centre administrator

                                    Katherine Greenacre