Academic staff

Professor Tao Wang

Director of the Centre for GaN Materials and Devices

Research interests:

  • MOCVD growth of III-nitride materials and devices
  • Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
  • III-nitride based solid-state lighting
  • Application of plasmonics in III-nitride optoelectronics
  • Application of photonics crystal in III-nitride optoelectronics
  • III-nitride Solar Cell
  • III-nitride optoelectronics for hydrogen generation

Dr Rick Smith

Lecturer

Research Interests

Focused on GaN related materials and devices, particularly optoelectronics.

  • Hybrid organic/inorganic optoelectronics
  • Non-radiative energy transfer processes in hybrid GaN/organic interfaces
  • High efficiency semi-polar GaN based materials, LEDs and LD structures
  • Optical characterization techniques of III-nitride materials and devices

Visiting academics

Professor Pallab Bhattacharya, Dr Jayanta Sarma

Dr Qiang Li

Visiting academic

Xi’an Jiaotong University
Research interest

  • UV-LED devices, Nanomaterial of metal oxide semiconductor

    Research staff

    Dr Jie Bai

    Research Associate

    Ph.D, University of Tokushima, Japan

    Research Interests

    • Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
    • III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
    • High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
    • Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

      Dr Yipin Gong

      Research Associate

      B.Eng, Electronic and Electrical Engineering, University of Sheffield
      Ph.D. Electronic and Electrical Engineering, University of Sheffield

      Research Interests

      • Growth of c-plane III-nitride based materials and LED-structure by MOCVD
      • Growth of non-polar and semi-polar III-nitride based materials by MOCVD
      • Study of optical properties of AlGaN

        Dr Xiang Yu

        Research Associate

        B.Eng, Electronic and Electrical Engineering, University of Sheffield

        Research Interests

        • Growth of semi-polar III-nitride materials by MOCVD

          Ph.D. students

          Mr Chenqi Zhu

            Mr Zohaib Ahmed

              Mr Volkan Esendag

                Mr Peter Fletcher

                  Mr Suneal Ghataora

                  B.Eng. Electronic and Electrical Engineering, The University of Sheffield

                  Research Interests

                  • Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

                    Mr Samuel Greenhalgh

                      Mr Ling Jiu

                        Mr Nicolas Poyiatzis

                          Mr Shuoheng Shen

                            Mr Ye Tian

                              Mr Xuanming Zhao

                              2014-2015 Graduate from University of Sheffield (Msc)

                                Centre administrator

                                Katherine Greenacre