Academic staff

Professor Tao Wang

Director of the Centre for GaN Materials and Devices

Research interests:

  • MOCVD growth of III-nitride materials and devices
  • Nanofabrication of III-nitride optoelectronics with ultrahigh efficiency
  • III-nitride based solid-state lighting
  • Application of plasmonics in III-nitride optoelectronics
  • Application of photonics crystal in III-nitride optoelectronics
  • III-nitride Solar Cell
  • III-nitride optoelectronics for hydrogen generation

Dr Rick Smith

Lecturer

Research Interests

Focused on GaN related materials and devices, particularly optoelectronics.

  • Hybrid organic/inorganic optoelectronics
  • Non-radiative energy transfer processes in hybrid GaN/organic interfaces
  • High efficiency semi-polar GaN based materials, LEDs and LD structures
  • Optical characterization techniques of III-nitride materials and devices

Visiting academics

Professor Pallab Bhattacharya, Dr Jayanta Sarma

Dr Yu Lu

Visiting academic

Anhui University of Technology

Research interests:

  • III-nitride based LED and LD
  • HVPE growth of GaN substrate

    Dr Qiang Wang

    Visiting academic

    Qilu University of Technology

    Research interests:

    • Nano/micro fabrication and characterisation of III-nitride based LED

      Research staff

      Dr Jie Bai

      Research Associate

      Ph.D, University of Tokushima, Japan

      Research Interests

      • Nanotechnology including fabrication of templates for semi-/non-polar GaN overgrowth;
      • III-nitride-based high-brightness nanorod array LEDs, UV-LEDs, solar cells with photonic nanostructures and Laser Diodes on sapphire substrates;
      • High-resolution transmission electron microscopy and energy x-ray microanalysis study of nitride-related semiconductor materials;
      • Structural and optical investigation of InGaN/GaN and GaN/AlGaN multiple quantum well structures.

        Dr Yuefei Cai

        Research Associate

        Ph.D., Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, January 2018
        M.Phil., Physical Electronics, Harbin Institute of Technology, China, July 2013
        B.Sc., Electronic Science and Technology, Harbin Institute of Tehnology, China, July 2011

        Research Interests:

        • Monolithic integration of III-nitride electronic and optical devices;
        • Design, fabrication and characterization of III-nitride devices (GaN HEMT, LED, Photodiode, etc.)

          Dr Suneal Ghataora

          Research Associate

          PhD in Electronic and Electrical Engineering, University of Sheffield, UK, 2019

          B.Eng. Electronic and Electrical Engineering, The University of Sheffield

          Research Interests

          • Fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices.

            Dr Kai Huang

            Research Associate

            PhD in Microelectronics and Solid State Electronics, Nanjing University, China, 2007

            BSc in Microelectronics, Nanjing University, China, 2002

            Research Interests:

            • AlGaN based deep UV optoelectronics
            • Plasmonics in III-nitride optoelectronics

              Dr Sheng Jiang

              Research Associate

              PhD in Electronic and Electrical Engineering, University of Sheffield, UK, 2018

              MSc in Electronic and Electrical Engineering, University of Sheffield, UK, 2013

              BEng in Automatic Control and Electrical Systems Engineering, East China University of Science and Technology (ECUST), Shanghai, China, 2011

              Research Interests:

              • GaN based high-voltage high-frequency transistors for power switching applications
              • GaN based integrated circuits and systems

                Mr Nicolas Poyiatzis

                Research Associate

                PhD in Electronic and Electrical Engineering, University of Sheffield, 2020
                MEng Electrical Engineering, The University of Sheffield

                Research interests:

                • Fabrication and characterization of semi-polar III-Nitride based opto-electronics

                  PhD students

                  Mr Philippe Roosvelt Bantsi

                  MSc Electronic Engineering, Bangor University, UK, 2017
                  BEng Electronic Engineering, Bangor University, UK, 2016

                  Research interests:

                  • Fabrication and characterisation of hybrid organic and inorganic III Nitride based opto-electronic devices (LED and LASER)
                  • Transfer printing technique for hybrid device fabrication
                  • Non-radiative energy transfer processes for opto-electronic devices

                    Mr Xinchi Chen

                    MSc in Electronic and Electrical Engineering, University of Sheffield, UK, 2019
                    BEng in Electronic Engineering, University of Huddersfield, UK, 2018
                    BEng in Electronic and Information Engineering, Beijing University of Aeronautics and Astronautics (BUAA), Beijing, China, 2017

                    Research Interests:

                    • Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays

                      Mr Volkan Esendag

                      MEng Electronics and Nanotechnology, University of Leeds

                      Research interests

                      • Monolithic Integration of Group III-Nitrides on a Si Substrate

                        Mr Peng Feng

                        BSc, Applied Physics, Qingdao University of Technology
                        MSc, Semiconductor Photonics and Electronics, University of Sheffield

                        Research interests:

                        • Growth and characterisation of monolithically integrated III-nitride micro-LED arrays.

                          Mr Peter Fletcher

                          Research interests

                          • Growth and growth related material characteristics, optical investigation on non-polar and semi-polar multi quantum wells
                          • Optical investigation of non-polar and semi-polar nano-membranes using conductive etching approach

                            Mr Jack Haggar

                            Research summary:

                            • Fabrication and characterisation of III-Nitride photonics and electronics for visible light wireless communications.

                              Mr Zhiheng Lin

                              MSc, Semiconductor Photonics and Electronics, University of Sheffield

                              Research Interests:

                              • Monolithically integrated III-nitride micro-LEDs on silicon for micro-displays

                                Mr Guillem Martínez de Arriba

                                Bsc Electronic Engineering for Telecommunications, Autonomous University of Barcelona (UAB), Spain
                                Msc Electronic and Electrical Engineering, The University of Sheffield

                                Research Interests:

                                • III nitrides materials for HEMT and Microdisk laser devices

                                  Mr Shuoheng Shen

                                  B.Sc, Optical Information Science and Technology, University of Shanghai for Science and Technology
                                  MSc, Semiconductor Photonics and Engineering, University of Sheffield

                                  Research Interests

                                  • Growth of Non-polar and Semi-polar III-nitride based materials on silicon substrates by MOCVD.

                                    Mr Ye Tian

                                    B.Sc, Electrical Engineering, University of Liverpool
                                    MSc, Semiconductor Photonics and Engineering, University of Sheffield

                                    Research Interests:

                                    • The growth of nitrogen-polar III-nitride based materials by MOCVD.
                                    • Investigation of nitrogen-polar nano-membranes using conductive etching approach.

                                      Mr Ce Xu

                                      BSc, Electronic and Electrical Engineering , University of Greenwich
                                      MSc, Electronic and Electrical Engineering, University of Sheffield

                                      Research interests

                                      • Growth and characterisation of monolithically integrated III-nitride micro-LED

                                        Mr Xuefei Yang

                                        MSc in Electronics and Electrical Engineering, University of Sheffield, UK, 2018

                                        BEng in Electronic and Electrical Engineering, University of ZhengZhou(ZZU), ZhengZhou, China, 2016

                                        Research Interests
                                        • Superluminescent Light Emitting Diode with  Quantum Dots fabricated by Transfer printing and simulated by FDTD

                                          Mr Xuanming Zhao

                                          2014-2015 Graduate from University of Sheffield (Msc)

                                          Research Interests

                                          • Growth of Semi-polar III-nitride based materials on silicon substrates by MOCVD and Template Fabrication.

                                            Mr Chenqi Zhu

                                            B.Sc, Electronic and Electrical Engineering, Shaanxi Normal University
                                            MSc, Electronic and Electrical Engineering, University of Sheffield

                                            Research interests:

                                            • Monolithic Integration and growth of Group III-Nitrides on Si Substrate

                                              Technical staff

                                              Stephen Atkin

                                              Senior Technician

                                              MIScT

                                                Centre administrator

                                                Katherine Greenacre