• Non-Line-of-sight (NLOS) communications
  • water purification
  • Environmental Protection

Novel approach for 340 nm UV LEDs

Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer
T. Wang, K. B. Lee, J. Bai, P. J. Parbrook, R. J. Airey, Q. Wang, G. Hill, F. Ranalli and A. G. Cullis
Appl. Phys. Lett. 89, 081126 (2006); http://dx.doi.org/10.1063/1.2338784

UV_2
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UV_3
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UV_4
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UV_5
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UV_6

310-340 nm UV LEDs

The 310–340 nm ultraviolet light emitting diodes grown using a thin GaN interlayer on a high temperature AlN buffer
T Wang, K B Lee, J Bai, P J Parbrook, F Ranalli, Q Wang, R J Airey, A G Cullis, H X Zhang, D Massoubre
Journal of Physics D: Applied Physics, Volume 41, Number 9 (2008)

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340 nm MicroLED array consisting of 1616 micro-disk elements in collaboration with Strathclyde University
340 nm MicroLED array consisting of 16×16 micro-disk elements in collaboration with Strathclyde University

Deep UV emission

Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN buffer
J. Bai, T. Wang, P. J. Parbrook and A. G. Cullis
Appl. Phys. Lett. 89, 131925 (2006); http://dx.doi.org/10.1063/1.2358123

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