XRD characterization of semi-polar GaN

  • Greatly enhanced crystalline quality of our 5µm GaN (XRD FWHM <360”)
  • Latest data: XRD linewidth of ~ 0.07 degree at 90 azimuth angle

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission
T Wang
Semicond. Sci. Technol. 31, 093003 (2016)
This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN.

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Our 2” wafer (d=5µm)
1×1 cm2 Free-standing GaN (d=330 µm) from a commercial company


Semi-polar LEDs (Green to Amber)

  • Semipolar InGaN LEDs bridge the “green/yellow” gap for ultrafast visible light communications and Opto-genetic applications
  • Highlighted by a number of media, “Semiconductor Today”, ”LED Inside”, ”END Asia”
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(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates
J. Bai, B. Xu, F. G. Guzman, K. Xing, Y. Gong, Y. Hou and T. Wang
Appl. Phys. Lett. 107, 261103 (2015)