Development of advanced overgrowth techniques to allow the growth of high quality GaN on substrates in non-polar and semi-polar orientations.

  • GaN on sapphire: 4 and 2 inch (Polar; non-polar; semi-polar )
  • GaN on Silicon: (111), (110), (311), (411)
  • GaN on SiC: 6H
  • GaN on Diamond: (111) and others
  • Advanced Manufacturing Capabilities

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MOVPE epitaxial growth of III-nitrides (AlGaN, GaN, InGaN) from deep UV to the whole visible spectral region

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