Development of advanced overgrowth techniques to allow the growth of high quality GaN on substrates in non-polar and semi-polar orientations.
- GaN on sapphire: 4 and 2 inch (Polar; non-polar; semi-polar )
- GaN on Silicon: (111), (110), (311), (411)
- GaN on SiC: 6H
- GaN on Diamond: (111) and others
- Advanced Manufacturing Capabilities
MOVPE epitaxial growth of III-nitrides (AlGaN, GaN, InGaN) from deep UV to the whole visible spectral region