• Epitaxial growth of µLEDs/HEMTs on sapphire
  • IQE increases with decreasing dimension, which is opposite to all the µLEDs reported so far.
  • Major advantage: eliminating any etching induced damages
  • Three patents on μ-LEDs have been filed


A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)

J. Bai, Y. Cai P. Feng, P. Fletcher, X. Zhao, C. Zhu & T.Wang
ACS Photonics (2020), doi: 10.1021/acsphotonics.9b01351