Blue laser diode, among a few earliest university groups to achieve it world wide

Demonstration of electrically injected InGaN/GaN based violet/blue laser in collaboration with an overseas team for device fabrication in 2004, achieved then among only a few university groups.
Highlighted in “Nitride Europe”, III-Vs Review 17, 36 (2004)

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Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer
Q. Wang, T. Wang, J. Bai, A. G. Cullis, P. J. Parbrook and F. Ranalli
J. Appl. Phys. 103, 123522 (2008);
Ultra high density of QDs with high crystal quality: room temperature stimulated emission


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Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire
Q. Wang, Y. P. Gong, J. F. Zhang, J. Bai, F. Ranalli1 and T. Wang
Appl. Phys. Lett. 95, 161904 (2009);
High temperature AlN buffer technique: RT stimulated emission at 340 nm with a low threshold
Highlighted in “Semiconductor Today” on 28th October 2009

ap_phys_coverShortest wavelength VCSEL

High quality III-nitride DBR: Shortest wavelength VCSEL at room temperature so far

Highlighted by “Applied Physics Letters” cover image

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Optically pumped ultraviolet lasing from nitride nanopillars at room temperature
Rui Chen, H. D. Sun, T. Wang, K. N. Hui and H. W. Choi
Appl. Phys. Lett. 96, 241101 (2010);