Unique advantages of GaN-based ISB

  • Large conduction band offset =>1.75eV for GaN/AlN, pushing this family of devices to much shorter wavelengths
  • 1.3-1.55μm wavelength range used for fiber-optics telecommunications requiring a band offset of ~1 eV
  • Ultra short ISB relaxation time (140-400 fs at RT) 10 times faster than in InGaAs QWs, offering the prospect of ultrafast ISB devices. Appl. Phys. Lett. 77, 648(2000); Semicond. Sci. Technol. 19, S463(2004)
  • Large longitudinal phonon energy (92meV for GaN compared to 36meV for GaAs) => enable sources emitting in the Reststrahlen band of GaAs and InP and high-performance lasers at THz frequencies