Semi-insulating GaN for electronics

Semi-insulating GaN for power electronics & RF devices for 5G application

N=7.9-8.2 x 1012 cm-2 µ =1100-1400cm2V-1s-1
N=7.9-8.2 x 1012 cm-2
µ =1100-1400cm2V-1s-1
Gate-drain spacing = 3µm, Gate length = ~ 1.2 µm
Gate-drain spacing = 3µm,
Gate length = ~ 1.2 µm