The centre’s research interests include:
- MOVPE epitaxial growth of III-nitrides (AlGaN, GaN, InGaN) from deep UV to the whole visible spectral region.
- MOVPE overgrowth of III-nitrides on patterned surface on sapphire and silicon
- Non-/semi- polar GaN and AlGaN for next generation Photonic and Electronics device on sapphire and silicon
- Fabrication for ultra energy efficient III-nitride emitters for Solid State lighting, wireless communications and Opto-genetics
- Fabrication of III-nitride nano/micro lasers with ultra low threshold
- Hybrid III-nitrides/organic/2D materials Optoelectronics
- III-nitride solar-powered hydrogen generation, solar cells
- Integration of III-nitride and other III-V photonics & electronics
