“Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates” has been published in Applied Physics Letters. The paper by members of the Centre for GaN Materials and Devices appears in Volume 109, Issue 24 (DOI: 10.1063/1.4972403).
Xiang Yu, one of our Research Centre students has passed his PhD viva. Well done Xiang.
Join us at The Diamond on Wednesday 11th January 2017 to discover more about our world-class semiconductor growth, fabrication and characterization facilities, funding opportunities and collaborative R&D. The day includes: Research expertise, technology and insight from the Advanced Detector Centre
Transfer printing is a key emerging technology in the field of semiconductor device fabrication. In this project, novel GaN based optoelectronic devices will be developed utilizing transfer printing techniques to stack III-nitride materials on non-native substrates and combine these III-nitride
Professor Tao Wang is an invited speaker at SPIE OPTO, the Optoelectronics and Photonic Materials and Devices Conference, part of Photonics West 2017 which takes place in San Francisco, California in January 2017. OPTO will focus on silicon photonics, photonic
Dr Modestos Athanasiou, Research Associate at the Centre for GaN Materials and Devices has won the “2016 Outstanding Poster Award” at the International Workshop on Nitride Semiconductors (IWN 2016) in Florida. The poster – “Monolithically Integrated White Light Microdisk Laser
Dr Rick Smith and Dr Modestos Athanasiou will be attending the International Workshop on Nitride Semiconductors (IWN 2016) in Florida. The event, which runs from the 2-7 October 2016 is a premier biennial meeting, attracting nearly a thousand international participants.
Professor Tao Wang is an invited speaker at next week’s IEEE Photonics conference in Waikoloa, Hawaii USA (2-6 October 2016). His talks will feature in two topic areas: Displays and Lighting (“Semipolar InGaN/GaN Based Long Wavelength Emitters for Lighting and
Applications are invited for 2 fully-funded 3.5 year PhD studentships to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors. Find
Professor Tao Wang, Director of the Centre for GaN Materials and Devices, has been interviewed for China Daily. He is quoted in an article which highlights the research partnership between The University of Sheffield and Nanjing University in the field