Professor Tao Wang is an invited speaker at SPIE OPTO, the Optoelectronics and Photonic Materials and Devices Conference, part of Photonics West 2017 which takes place in San Francisco, California in January 2017. OPTO will focus on silicon photonics, photonic
Dr Modestos Athanasiou, Research Associate at the Centre for GaN Materials and Devices has won the “2016 Outstanding Poster Award” at the International Workshop on Nitride Semiconductors (IWN 2016) in Florida. The poster – “Monolithically Integrated White Light Microdisk Laser
Dr Rick Smith and Dr Modestos Athanasiou will be attending the International Workshop on Nitride Semiconductors (IWN 2016) in Florida. The event, which runs from the 2-7 October 2016 is a premier biennial meeting, attracting nearly a thousand international participants.
Professor Tao Wang is an invited speaker at next week’s IEEE Photonics conference in Waikoloa, Hawaii USA (2-6 October 2016). His talks will feature in two topic areas: Displays and Lighting (“Semipolar InGaN/GaN Based Long Wavelength Emitters for Lighting and
Applications are invited for 2 fully-funded 3.5 year PhD studentships to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors. Find
Professor Tao Wang, Director of the Centre for GaN Materials and Devices, has been interviewed for China Daily. He is quoted in an article which highlights the research partnership between The University of Sheffield and Nanjing University in the field
University of Sheffield Vice-Chancellor Professor Sir Keith Burnett will visit Shanghai and Nanjing next week to develop existing collaborations and meet with Chinese partners in the University’s award-winning Confucius Institute – twice named a Global Confucius Institute of the Year.
Professor Tao Wang was an invited speaker at the International Conference on Electronic Materials 2016 (ICEM2016). This conference on electronic materials and related technologies was held from the 4th to 8th July, 2016 at Suntec in Singapore. Professor Wang’s talk
In this paper, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates” we demonstrate semipolar InGaN LEDs with excellent performance in a wide spectral region from green to amber, grown on our overgrown semipolar (11-22) GaN. The
Members of the Centre will attend the 11th International Conference on Nitride Semiconductors in Beijing between August the 30th and September the 4th. Recent developments in our research will be presented in an invited talk by Professor Wang and across