The Centre for GaN Materials and Devices has internationally recognised expertise in the field of III-nitride semiconductor materials and devices, demonstrated by a strong publication record, frequent citations, and highlights in major semiconductor magazines.

Featured in:

EW_logo ST_logo CS_logo eenews_logo ledinside_logoCD_logotheengineer_logomw_logo

Press highlights

Writing about the Centre for GaN Materials and Devices?

Contact us and stay up to date by following us on Twitter @GaNCentre

Contact us

News archive