The Centre for GaN Materials and Devices has internationally recognised expertise in the field of III-nitride semiconductor materials and devices, demonstrated by a strong publication record, frequent citations, and highlights in major semiconductor magazines.
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- 29th July 2016, ChinaDaily Europe “Steel City forges solid China links”
- 22nd January 2016, eeNews Europe “LED grown on semi-polar GaN emits green and yellow colors”
- 23rd October 2015, The University of Sheffield “Growing lightbulbs: how Sheffield and Nanjing are sowing sustainable energy solutions”
- 13th July 2015, Semiconductor Today “Sheffield University LED spin-off Seren Photonics raises £1.8m”
- 29th May 2015, Semiconductor Today “Semi-polar GaN LED firm Seren wins best business and investment award at European Photonics Venture Forum”
- 9th March 2015, LEDinside “Seren Introduces LED Grade Semi-Polar GaN Templates”
- 25 May 2012, Semiconductor Today “Seren wins £230k UK R&D grant to speed commercialization of LED technology”
- 9th May 2012, The University of Sheffield “International collaboration launched with plans to create a more energy efficient world”
- 26th February 2010, Compound Semiconductor “LED Product To Boost Efficiency”
- 25th February 2010, The Engineer “Let there be more light”
- 10th February 2010,Semiconductor Today “New start-up Seren Photonics targets white LED market”
- 10th February 2010, Compound Semiconductor “Fusion IP Spins Out LED Business From Sheffield University”
- 26th November 2007, The Engineer “Laser Leap”