2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | Pre 2000

2017

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  • Li, Z., Wang, L., Jiu, L., Bruckbauer, J., Gong, Y., Zhang, Y., Bai, J., Martin, R. W. and Wang, T. (2017), Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition. Applied Physics Letters, 110 (9). 091102; doi: 10.1063/1.4977428
  • Li, Z.,  Jiu, L., Gong, Y., Wang, L.,  Zhang, Y., Bai, J., and Wang, T. (2017), Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue. Applied Physics Letters, 110, 082103; doi:10.1063/1.4977094
  • Athanasiou, M., Smith, R. M, Ghataora, S. & Wang, T. (2017), Polarized white light from hybrid organic/III-nitrides grating structures. Scientific Reports 7, Article number: 39677. doi:10.1038/srep39677


2016

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  • Wang, T. (2016), Development of III-nitride nanostructures for low threshold lasing and semipolar GaN towards Yellow/Orange lasing. Photonics Conference (IPC), 2016 IEEE, doi: 10.1109/IPCon.2016.7831115
  • Wang, T. (2016), Semi-polar InGaN/GaN based long emission wavelength emitter for lighting and displays. Photonics Conference (IPC), 2016 IEEE, doi: 10.1109/IPCon.2016.7831088
  • Hou, Y., Yu, X., Syed, Z. A., Shen, S., Bai, J., & Wang, T. (2016). GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting.. Nanotechnology, 27(45). doi:1088/0957-4484/27/45/455401
  • Wang, T. (2016). Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission. Semiconductor Science and Technology, 31(9), 093003. doi:1088/0268-1242/31/9/093003
  • Zhang, Y., Huang, J. -A., Li, K. H., Bai, D., Wang, Y., Wang, T., & Choi, H. W. (2016). Influence of strain on emission from GaN-on-Si microdisks. Journal of Physics D: Applied Physics, 49(37), 375103. doi:1088/0022-3727/49/37/375103
  • Hou, Y., Syed, Z. A., Smith, R., Athanasiou, M., Gong, Y., Yu, X., . . . Wang, T. (2016). Enhanced water splitting with silver decorated GaN photoelectrode. Journal of Physics D: Applied Physics, 49(26), 265601. doi:1088/0022-3727/49/26/265601
  • Hou, Y., Bai, J., Smith, R., & Wang, T. (2016). A single blue nanorod light emitting diode. Nanotechnology, 27(20). doi:1088/0957-4484/27/20/205205
  • Yu, X., Hou, Y., Shen, S., Bai, J., Gong, Y., Zhang, Y., & Wang, T. (2016). Semi-polar (11-22) GaN grown on patterned (113) Si substrate. physica status solidi (c), 13(5-6), 190-194. doi:1002/pssc.201510209
  • Southern-Holland, R., Halsall, M., Wang, T., & Gong, Y. (2016). Power density dependent photoluminescence spectroscopy and Raman mapping of semi-polar and polar InGaN/GaN multiple quantum well samples. physica status solidi (c), 13(5-6), 274-277. doi:1002/pssc.201510196
  • Bai, J., Athanasiou, M., & Wang, T. (2016). Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells. physica status solidi (c), 13(5-6), 297-300. doi:1002/pssc.201510171
  • Bai, J., Athanasiou, M., & Wang, T. (2016). Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells. Solar Energy Materials and Solar Cells, 145, 226-230. doi:1016/j.solmat.2015.10.026
  • Zhang, Y., Bai, J., Hou, Y., Smith, R. M., Yu, X., Gong, Y., & Wang, T. (2016). Defect reduction in overgrown semi-polar (11-22) GaN on a regularly arrayed micro-rod array template. AIP Advances, 6(2), 025201. doi:1063/1.4941444
  • Zhang, Y., Smith, R. M., Hou, Y., Xu, B., Gong, Y., Bai, J., & Wang, T. (2016). Stokes shift in semi-polar ( 112¯2) InGaN/GaN multiple quantum wells. Applied Physics Letters, 108(3), 031108. doi:1063/1.4940396
  • Zhang, Y., Feng, C., Wang, T., & Choi, H. W. (2016). GaN hemispherical micro-cavities. Applied Physics Letters, 108(3), 031110. doi:1063/1.4940375
  • Zhuang, Z., Guo, X., Liu, B., Hu, F., Dai, J., Zhang, Y., . . . Zhang, R. (2016). Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale. Nanotechnology, 27(1), 015301. doi:1088/0957-4484/27/1/015301

2015

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  • Bai, J., Xu, B., Guzman, F. G., Xing, K., Gong, Y., Hou, Y., & Wang, T. (2015). (11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates. Applied Physics Letters, 107(26), 261103. doi:1063/1.4939132
  • Athanasiou, M., Smith, R. M., Hou, Y., Zhang, Y., Gong, Y., & Wang, T. (2015). Enhanced polarization of (11–22) semi-polar InGaN nanorod array structure. Applied Physics Letters, 107(14), 141110. doi:1063/1.4932951
  • Smith, R. M., Athanasiou, M., Bai, J., Liu, B., & Wang, T. (2015). Enhanced non-radiative energy transfer in hybrid III-nitride structures. Applied Physics Letters, 107(12), 121108. doi:1063/1.4931760
  • Humphreys, B., Zhang, T., Griffiths, C., & Wang, T. (2015). Development of high quality and low defect density semipolar and non-polar GaN templates. In 2013 10th China International Forum on Solid State Lighting, ChinaSSL 2013 (pp. 52-55). doi:1109/SSLCHINA.2013.7177312
  • Bai, J., Yu, X., Gong, Y., Hou, Y. N., Zhang, Y., & Wang, T. (2015). Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates. Semiconductor Science and Technology, 30(6), 065012. doi:1088/0268-1242/30/6/065012
  • Tang, H., Liu, B., & Wang, T. (2015). Influence of piezoelectric fields on InGaN based intermediate band solar cells. Journal of Physics D: Applied Physics, 48(2), 025101. doi:1088/0022-3727/48/2/025101
  • Xu, B., Yu, X., Gong, Y., Xing, K., Bai, J., & Wang, T. (2015). Study of high-quality (11−22) semi-polar GaN grown on nanorod templates. physica status solidi (b), 252(5), 1079-1083. doi:1002/pssb.201451490
  • Gong, Y., Xing, K., Xu, B., Yu, X., Li, Z., Bai, J., & Wang, T. (2015). (Invited) High Efficiency Green-Yellow Emission from InGaN/GaN Quantum Well Structures Grown on Overgrown Semi-Polar (11-22) GaN on Regularly Arrayed Micro-Rod Templates. In ECS Transactions 66 (pp. 151-155). doi:10.1149/06601.0151ecst


2014

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  • Liu, B., Smith, R., Athanasiou, M., Yu, X., Bai, J., & Wang, T. (2014). Temporally and spatially resolved photoluminescence investigation of (112¯2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates. Applied Physics Letters, 105(26), 261103. doi:1063/1.4905191
  • Benton, J., Bai, J., & Wang, T. (2014). Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting. Applied Physics Letters, 105(22), 223902. doi:1063/1.4903246
  • Athanasiou, M., Smith, R., Liu, B., & Wang, T. (2014). Room temperature continuous–wave green lasing from an InGaN microdisk on silicon. Scientific Reports, 4. doi:1038/srep07250
  • Smith, R. M., Liu, B., Bai, J., & Wang, T. (2014). Temperature dependence of non-radiative energy transfer in hybrid structures of InGaN/GaN nanorods and F8BT films. Applied Physics Letters, 105(17), 171111. doi:1063/1.4901024
  • Wang, T. (2014). MOCVD growth of nitride DBRs for optoelectronics. In A. H. W. Choi (Ed.), Handbook of Optical Microcavities (pp. 526 pages). CRC Press.
  • Zhang, Y., Ma, Z., Zhang, X., Wang, T., & Choi, H. W. (2014). Optically pumped whispering-gallery mode lasing from 2-μm GaN micro-disks pivoted on Si. Applied Physics Letters, 104(22), 221106. doi:1063/1.4881183
  • Kim, T., Liu, B., Smith, R., Athanasiou, M., Gong, Y., & Wang, T. (2014). Coherent nanocavity structures for enhancement in internal quantum efficiency of III-nitride multiple quantum wells. Applied Physics Letters, 104(16). doi:1063/1.4873161
  • Bai, J., Yang, C. C., Athanasiou, M., & Wang, T. (2014). Efficiency enhancement of InGaN/GaN solar cells with nanostructures. Applied Physics Letters, 104(5), 051129. doi:1063/1.4864640
  • Hou, Y., Renwick, P., Liu, B., Bai, J., & Wang, T. (2014). Room temperature plasmonic lasing in a continuous wave operation mode from an InGaN/GaN single nanorod with a low threshold. Scientific Reports, 4. doi:1038/srep05014
  • Benton, J., Bai, J., & Wang, T. (2014). Nanoporous GaN for enhanced solar hydrogen production. In Proceedings of SPIE – The International Society for Optical Engineering 9176. doi:10.1117/12.2061104


2013

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  • Benton, J., Bai, J., & Wang, T. (2013). Significantly enhanced performance of an InGaN/GaN nanostructure based photo-electrode for solar power hydrogen generation. Applied Physics Letters, 103(13), 133904. doi:1063/1.4823550
  • Bruckbauer, J., Edwards, P. R., Bai, J., Wang, T., & Martin, R. W. (2013). Probing light emission from quantum wells within a single nanorod. Nanotechnology, 24(36). doi:1088/0957-4484/24/36/365704
  • Liu, B., Smith, R., Bai, J., Gong, Y., & Wang, T. (2013). Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures. Applied Physics Letters, 103(10). doi:1063/1.4820794
  • Xing, K., Gong, Y., Yu, X., Bai, J., & Wang, T. (2013). Improved crystal quality of (11-22) semi-polar GaN grown on a nanorod template. Japanese Journal of Applied Physics, 52(8 PART 2). doi:7567/JJAP.52.08JC03
  • Smith, R., Liu, B., Bai, J., & Wang, T. (2013). Hybrid III-nitride/organic semiconductor nanostructure with high efficiency nonradiative energy transfer for white light emitters.. Nano Lett, 13(7), 3042-3047. doi:1021/nl400597d
  • Athanasiou, M., Kim, T. K., Liu, B., Smith, R., & Wang, T. (2013). Fabrication of two-dimensional InGaN/GaN photonic crystal structure using a modified nanosphere lithography technique. Applied Physics Letters, 102(19). doi:1063/1.4805035
  • Benton, J., Bai, J., & Wang, T. (2013). Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure. Applied Physics Letters, 102(17), 173905. doi:1063/1.4803926
  • Bai, J., Gong, Y., Xing, K., Yu, X., & Wang, T. (2013). Efficient reduction of defects in (1120) non-polar and (1122) semi-polar GaN grown on nanorod templates. Applied Physics Letters, 102(10), 101906. doi:1063/1.4795619
  • Walther, T., Amari, H., Ross, I. M., Wang, T., & Cullis, A. G. (2013). Lattice resolved annular dark-field scannning transmission electron microscopy of (Al,Ga)GaN/GaN layers for measuring segregation with sub-monolayer precision. Journal of Materials Science, 48, 2883-2892. doi:1007/s10853-012-6822-3


2012

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  • Edwards, P. R., Jagadamma, L. K., Bruckbauer, J., Liu, C., Shields, P., Allsopp, D., . . . Martin, R. W. (2012). High-Resolution Cathodoluminescence Hyperspectral Imaging of Nitride Nanostructures. In Microscopy and Microanalysis 18 (pp. 1212-1219). doi:10.1017/S1431927612013475
  • Bai, J., Wang, Q., & Wang, T. (2012). Characterization of InGaN-based nanorod light emitting diodes with different indium compositions. Journal of Applied Physics, 111(11), 113103. doi:1063/1.4725417
  • Renwick, P., Tang, H., Bai, J., & Wang, T. (2012). Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures. APPLIED PHYSICS LETTERS, 100(18). doi:1063/1.4711210
  • Wang, Q., Bai, J., Gong, Y. P., & Wang, T. (2012). Investigation of the optical properties of InGaN/GaN nanorods with different indium composition. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 620-623.
  • Gong, Y., Xing, K., Bai, J., & Wang, T. (2012). Greatly improved crystal quality of non-polar GaN grown on a-plane GaN nano-rod template obtained using self-organised nano-masks. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 564-567.
  • Bai, J., Wang, Q., & Wang, T. (2012). Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes. Physica Status Solidi (A) Applications and Materials Science, 209(3), 477-480.
  • Hueting, N. A., Engin, E., Zain, A. M., Sarua, A., Heard, P. J., Kuball, M., . . . Cryan, M. J. (2012). Gallium Nitride distributed Bragg Reflector cavity for integrated photonics applications. 2012 Conference on Lasers and Electro-Optics, CLEO 2012.
  • Amari, H., Ross, I. M., Wang, T., & Walther, T. (2012). Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM. In Journal of Physics: Conference Series 371 (pp. 012014 (4 pages)).
  • Amari, H., Ross, I. M., Wang, T., & Walther, T. (2012). Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM. Physica Status Solidi. C: Current Topics in Solid State Physics, 9(3-4), 546-549. doi:1002/pssc.201100500
  • Amari, H., Ross, I. M., Wang, T., & Walther, T. (2012). Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM. Physica Status Solidi (C) Current Topics in Solid State Physics, 9(3-4), 546-549.
  • Hueting, N. A., Pugh, J. R., Engin, E., Zain, A. M., Sarua, A., Heard, P. J., . . . Cryan, M. J. (2012). A gallium nitride Distributed Bragg Reflector cavity for integrated photonics applications. International Conference on Transparent Optical Networks. doi:1109/ICTON.2012.6253827
  • Hueting, N. A., Engin, E., Zain, A. M., Sarua, A., Heard, P. J., Kuball, M., . . . Cryan, M. J. (2012). A gallium nitride distributed bragg reflector cavity for integrated photonics applications. CLEO: Science and Innovations, CLEO_SI 2012.
  • Hueting, N. A., Engin, E., Md Zain, A., Sarua, A., Heard, P. J., Kuball, M., . . . Cryan, M. J. (2012). A gallium nitride distributed bragg reflector cavity for integrated photonics applications. CLEO: Applications and Technology, CLEO_AT 2012.
  • Hueting, N. A., Engin, E., Md Zain, A., Sarua, A., Heard, P. J., Kuball, M., . . . Cryan, M. J. (2012). A gallium nitride distributed bragg reflector cavity for integrated photonics applications. Optics InfoBase Conference Papers.


2011

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  • Xing, K., Gong, Y., Bai, J., & Wang, T. (2011). InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks. APPLIED PHYSICS LETTERS, 99(18). doi:1063/1.3658803
  • Gong, Y. P., Xing, K., & Wang, T. (2011). Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures. APPLIED PHYSICS LETTERS, 99(17). doi:1063/1.3656971
  • Parbrook, P. J., & Wang, T. (2011). Light Emitting and Laser Diodes in the Ultraviolet. IEEE J SEL TOP QUANT, 17(5), 1402-1411. doi:1109/JSTQE.2011.2126563
  • Bruckbauer, J., Edwards, P. R., Wang, T., & Martin, R. W. (2011). High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures. APPL PHYS LETT, 98(14), . doi:1063/1.3575573
  • Gong, Y. P., Xing, K., & Wang, T. (2011). Optical gain in AlGaN/AlGaN multiple quantum wells grown on high temperature AlN multiple buffers. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2056-2058. doi:1002/pssc.201001060
  • Xing, K., Gong, Y., Bai, J., & Wang, T. (2011). InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks. Applied Physics Letters, 99(18). doi:1063/1.3658803
  • Wang, Q., Bai, J., Gong, Y. P., & Wang, T. (2011). Influence of strain relaxation on the optical properties of InGaN/GaN multiple quantum well nanorods. Journal of Physics D: Applied Physics, 44(39). doi:1088/0022-3727/44/39/395102
  • Gong, Y. P., Xing, K., & Wang, T. (2011). Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures. Applied Physics Letters, 99(17). doi:1063/1.3656971
  • Renwick, P., Tang, H., Wang, Q., Smith, R., & Wang, T. (2011). Enhanced internal quantum efficiency of an ingan/gan quantum well as a function of silver thickness due to surface plasmon coupling. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2176-2178. doi:1002/pssc.201001031


2010

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  • Lee, K. B., Parbrook, P. J., Wang, T., Bai, J., Ranalli, F., Airey, R. J., & Hill, G. (2010). The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 247 (pp. 1761-1763). doi:10.1002/pssb.200983617
  • Green, R. T., Luxmoore, J., Lee, K. B., Houston, P. A., Ranalli, F., Wang, T., . . . Martin, T. (2010). Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a SiCl4/SF6 dry etch recipe. J APPL PHYS, 108(1), . doi:1063/1.3457356
  • Davies, S. C., Mowbray, D. J., Ranalli, F., & Wang, T. (2010). Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures. APPL PHYS LETT, 96(25), . doi:1063/1.3456392
  • Chen, R., Sun, H. D., Wang, T., Hui, K. N., & Choi, H. W. (2010). Optically pumped ultraviolet lasing from nitride nanopillars at room temperature. APPL PHYS LETT, 96(24), . doi:1063/1.3449576
  • Lari, L., Amari, H., Walther, T., Bai, J., Wang, T., & Cullis, A. G. (2010). Electron microscopy of AlGaN-based multilayers for UV laser devices. Journal of Physics: Conference Series, 241. doi:1088/1742-6596/241/1/012048


2009

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  • Wang, Q., Gong, Y. P., Zhang, J. F., Bai, J., Ranalli, F., & Wang, T. (2009). Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire. APPL PHYS LETT, 95(16), . doi:1063/1.3253416
  • Davies, S. C., Mowbray, D. J., Ranalli, F., Parbrook, P. J., Wang, Q., Wang, T., . . . Bangert, U. (2009). Optical and microstructural studies of InGaN/GaN quantum dot ensembles. Applied Physics Letters, 95(11), 111903. doi:1063/1.3226645
  • Davies, S. C., Mowbray, D. J., Wang, Q., Ranalli, F., & Wang, T. (2009). Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots. Applied Physics Letters, 95(10), 101909. doi:1063/1.3224897
  • Green, R. T., Luxmoore, I. J., Houston, P. A., Ranalli, F., Wang, T., Parbrook, P. J., . . . Martin, T. (2009). Comparison of damage introduced into GaN/AlGaN/GaN heterostructures using selective dry etch recipes. Semiconductor Science and Technology, 24(7), 075020. doi:1088/0268-1242/24/7/075020
  • Lee, K. B., Parbrook, P. J., Wang, T., Bai, J., Ranalli, F., Airey, R. J., & Hill, G. (2009). Effect of the AlGaN electron blocking layer thickness on the performance of AlGaN-based ultraviolet light-emitting diodes. In Journal of Crystal Growth 311 (pp. 2857-2859). doi:10.1016/j.jcrysgro.2009.01.030
  • Fang, L., Tao, W., Bo, S., Sen, H., Fang, L., Nan, M., . . . Jian-Quan, Y. (2009). Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts. Chinese Physics B, 18(4), 1618-1621. doi:1088/1674-1056/18/4/055
  • Fang, L., Tao, W., Bo, S., Sen, H., Fang, L., Nan, M., . . . Jian-Quan, Y. (2009). The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al 0.245 Ga 0.755 N/GaN heterostructure and Ni/Au Schottky contact. Chinese Physics B, 18(4), 1614-1617. doi:1088/1674-1056/18/4/054
  • Bai, J., Wang, Q., Wang, T., Cullis, A. G., & Parbrook, P. J. (2009). Optical and microstructural study of a single layer of InGaN quantum dots. Journal of Applied Physics, 105(5), 053505. doi:1063/1.3079525
  • Davies, S. C., Mowbray, D. J., Parbrook, P. J., Ranalli, F., & Wang, T. (2009). Optical spectroscopy of InGaN-GaN quantum dot ensembles. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2). doi:1002/pssc.200880947
  • Davies, S. C., Mowbray, D. J., Parbrook, P. J., Ranalli, F., & Wang, T. (2009). Optical spectroscopy of InGaN-GaN quantum dot ensembles. In R. Butte (Ed.), PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 (pp. S586-S589). doi:10.1002/pssc.200880947
  • Ranalli, F., Parbrook, P. J., Bai, J., Lee, K. B., Wang, T., & Cullis, A. G. (2009). Non-polar AlN and GaN/AlN on r-plane sapphire. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2). doi:1002/pssc.200880948
  • Ranalli, F., Parbrook, P. J., Bai, J., Lee, K. B., Wang, T., & Cullis, A. G. (2009). Non-polar AlN and GaN/AlN on r-plane sapphire. In R. Butte (Ed.), PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 (pp. S780-S783). doi:10.1002/pssc.200880948
  • Wang, Q., Bai, J., Wang, T., Cullis, A. G., Parbrook, P. J., & Ranalli, F. (2009). MOCVD growth and optical study of InGaN quantum dots and their emitters on a high quality GaN layer grown using a high temperature AlN as buffer. Physica Status Solidi (C) Current Topics in Solid State Physics, 6(SUPPL. 2). doi:1002/pssc.200880946
  • Wang, Q., Bai, J., Wang, T., Cullis, A. G., Parbrook, P. J., & Ranalli, F. (2009). MOCVD growth and optical study of InGaN quantum dots and their emitters on a high quality GaN layer grown using a high temperature AlN as buffer. In R. Butte (Ed.), PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2 6 (pp. S582-S585). doi:10.1002/pssc.200880946


2008

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2007

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  • Wang, T. (2007). Nitride Emitters – Recent Progress. In Wide Bandgap Light Emitting Materials and Devices (pp. 109-144). doi:1002/9783527617074.ch3
  • Sherliker, B., Halsall, M., Kasalynas, I., Seliuta, D., Valusis, G., Vengris, M., . . . Buckle, P. D. (2007). Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range. Semiconductor Science and Technology, 22(11), 1240-1244. doi:1088/0268-1242/22/11/010
  • Bai, J., Wang, T., Parbrook, P. J., Wang, Q., Lee, K. B., & Cullis, A. G. (2007). Two coexisting mechanisms of dislocation reduction in an AlGaN layer grown using a thin GaN interlayer. Applied Physics Letters, 91(13), 131903. doi:1063/1.2790813
  • Fan, W. H., Olaizola, S. M., Wells, J. P. R., Fox, A. M., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2007). Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells (vol 84, pg 3052, 2004). APPL PHYS LETT, 91(9), . doi:1063/1.2778361
  • Wang, Q., Wang, T., Parbrook, P. J., Bai, J., & Cullis, A. G. (2007). The influence of a capping layer on optical properties of self-assembled InGaN quantum dots. Journal of Applied Physics, 101(11), 113520. doi:1063/1.2737971
  • Alyamani, A., Sanvitto, D., Khalifa, A. A., Skolnick, M. S., Wang, T., Ranalli, F., . . . Airey, R. (2007). GaN hybrid microcavities in the strong coupling regime grown by metal-organic chemical vapor deposition on sapphire substrates. Journal of Applied Physics, 101(9), 093110. doi:1063/1.2728744
  • Green, R. T., Tan, W. S., Houston, P. A., Wang, T., & Parbrook, P. J. (2007). Investigations on Electrode-Less Wet Etching of GaN Using Continuous Ultraviolet Illumination. In Journal of Electronic Materials 36 (pp. 397-402). doi:10.1007/s11664-006-0070-8
  • King, P. D. C., Veal, T. D., Jefferson, P. H., McConville, C. F., Wang, T., Parbrook, P. J., . . . Schaff, W. J. (2007). Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy. Applied Physics Letters, 90(13), 132105. doi:1063/1.2716994
  • Lee, K. B., Parbrook, P. J., Wang, T., Ranalli, F., Martin, T., Balmer, R. S., & Wallis, D. J. (2007). Optical investigation of exciton localization in AlxGa1-xN. J APPL PHYS, 101(5), . doi:1063/1.2434991
  • Ranalli, F., Parbrook, P. J., Wang, T., Bai, J., Lee, K. B., Airey, R. J., . . . Cullis, A. G. (2007). Improved AlN buffer layer technologies for UV-LEDs. In physica status solidi (c) 4 (pp. 120-124). doi:10.1002/pssc.200673546
  • Fan, W. H., Olaizola, S. M., Wells, J. P. R., Fox, A. M., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2007). Erratum: Femtosecond studies of electron capture times in InGaNGaN multiple quantum wells (Applied Physics Letters (2004) 84 (3052)). Applied Physics Letters, 91(9). doi:1063/1.2778361


2006

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  • Na, J. H., Taylor, R. A., Lee, K. H., Wang, T., Tahraoui, A., Parbrook, P., . . . Lee, J. S. (2006). Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness. APPL PHYS LETT, 89(25), . doi:1063/1.2423232
  • Aliev, G. N., Zeng, S., Bingham, S. J., Wolverson, D., Davies, J. J., Wang, T., & Parbrook, P. J. (2006). Optically-detected magnetic resonance of spin-paired complexes emitting in the spectral region in Mg-doped GaN. Physical Review B, 74(23). doi:1103/PhysRevB.74.235205
  • Bai, J., Wang, T., Parbrook, P. J., & Cullis, A. G. (2006). Mechanisms of dislocation reduction in an Al[sub 0.98]Ga[sub 0.02]N layer grown using a porous AlN buffer. Applied Physics Letters, 89(13), 131925. doi:1063/1.2358123
  • Wang, T., Lee, K. B., Bai, J., Parbrook, P. J., Airey, R. J., Wang, Q., . . . Cullis, A. G. (2006). Greatly improved performance of 340 nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layer. Applied Physics Letters, 89(8), 081126. doi:1063/1.2338784
  • Zeng, S., Aliev, G. N., Wolverson, D., Davies, J. J., Bingham, S. J., Abdulmalik, D. A., . . . Parbrook, P. J. (2006). Origin of the red luminescence in Mg-doped GaN. Applied Physics Letters, 89(2), 022107. doi:1063/1.2220552
  • Brown, J., Wells, J. P. R., Hashemizadeh, S. A., Parbrook, P. J., Wang, T., Fox, A. M., . . . Skolnick, M. S. (2006). Fast spin relaxation in InGaN/GaN multiple quantum wells. In PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 243 (pp. 1643-1646). doi:10.1002/pssb.200565271
  • Kundys, D. O., Wells, J. P. R., Andreev, A. D., Hashemizadeh, S. A., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2006). Resolution of discrete excited states in InxGa1-xN multiple quantum wells using degenerate four-wave mixing. PHYS REV B, 73(16), . doi:1103/PhysRevB.73.165309
  • Sherliker, B., Halsall, M. P., Buckle, P. D., Parbrook, P. J., & Wang, T. (2006). Effects of depletion on the emission from individual InGaN dots. Applied Physics Letters, 88(12), 122115. doi:1063/1.2186973
  • Bai, J., Wang, T., Parbrook, P. J., Ross, I. M., & Cullis, A. G. (2006). V-shaped pits formed at the GaN/AlN interface. Journal of Crystal Growth, 289(1), 63-67. doi:1016/j.jcrysgro.2005.10.146
  • Thomson, J. D., Pope, I. A., Smowton, P. M., Blood, P., Lynch, R. J., Hill, G., . . . Parbrook, P. (2006). The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes. Journal of Applied Physics, 99(2), 024507. doi:1063/1.2165405
  • Bai, J., Wang, T., Comming, P., Parbrook, P. J., David, J. P. R., & Cullis, A. G. (2006). Optical properties of AlGaN∕GaN multiple quantum well structure by using a high-temperature AlN buffer on sapphire substrate. Journal of Applied Physics, 99(2), 023513. doi:1063/1.2161941
  • Zeng, S., Aliev, G. N., Wolverson, D., Davies, J. J., Bingham, S. J., Abdulmalik, D. A., . . . Parbrook, P. J. (2006). The role of vacancies in the red luminescence from Mg-doped GaN. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1919-1922. doi:1002/pssc.200565331
  • Aliev, G. N., Zeng, S., Davies, J. J., Wolverson, D., Bingham, S. J., Parbrook, P. J., & Wang, T. (2006). The magnesium acceptor states in GaN: An investigation by optically-detected magnetic resonance. Physica Status Solidi (C) Current Topics in Solid State Physics, 3, 1892-1896. doi:1002/pssc.200565332
  • Hashemizadeh, S. A., Wells, J. P. R., Brown, J., Murzyn, P., Jones, B. D., Wang, T., . . . Skolnick, M. S. (2006). Stimulated emission and carrier dynamics in AlInGaN multi-quantum wells. In S. Hildebrandt, & M. Stutzmann (Eds.), PHYSICA STATUS SOLIDI C – CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 3 (pp. 1958-1961). doi:10.1002/pssc.200565370
  • Wang, T. (2006). Optical investigation of InGaN related quantum well structures. In Z. C. Feng (Ed.), III-Nitride Semiconductor Materials (pp. 305-343). Retrieved from http://www.worldscientific.com/worldscibooks/10.1142/p437#t=aboutBook


2005

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  • Hashemizadeh, S. A., Wells, J. P. R., Murzyn, P., Brown, J., Jones, B. D., Wang, T., . . . Skolnick, M. S. (2005). Picosecond carrier dynamics in AllnGaN multiple quantum wells. APPL PHYS LETT, 87(23), . doi:1063/1.2137990
  • Wang, T., Bai, J., Parbrook, P. J., & Cullis, A. G. (2005). Air-bridged lateral growth of an Al[sub 0.98]Ga[sub 0.02]N layer by introduction of porosity in an AlN buffer. Applied Physics Letters, 87(15), 151906. doi:1063/1.2089182
  • Bai, J., Wang, T., Parbrook, P. J., Lee, K. B., & Cullis, A. G. (2005). A study of dislocations in AlN and GaN films grown on sapphire substrates. Journal of Crystal Growth, 282(3-4), 290-296. doi:1016/j.jcrysgro.2005.05.023
  • Aliev, G. N., Zeng, S., Davies, J. J., Wolverson, D., Bingham, S. J., Parbrook, P. J., & Wang, T. (2005). Nature of acceptor states in magnesium-doped gallium nitride. Physical Review B, 71(19). doi:1103/PhysRevB.71.195204
  • Wang, T., Raviprakash, G., Ranalli, F., Harrison, C. N., Bai, J., David, J. P. R., . . . Ohno, Y. (2005). Effect of strain relaxation and exciton localization on performance of 350-nm AlInGaN quaternary light-emitting diodes. Journal of Applied Physics, 97(8), 083104. doi:1063/1.1877816
  • Wang, T., Ranalli, F., Parbrook, P. J., Airey, R., Bai, J., Rattlidge, R., & Hill, G. (2005). Fabrication and optical investigation of a high-density GaN nanowire array. APPL PHYS LETT, 86(10), . doi:1063/1.1879110
  • Sherliker, B., Harmer, P., Halsall, M. P., Buckle, P., Parbrook, P. J., & Wang, T. (2005). Microphotoluminescence and photocurrent studies of InGaN quantum dots grown by MOVPE at low surface densities on GaN. In Microelectronics Journal 36 (pp. 223-226). doi:10.1016/j.mejo.2005.02.080
  • Thomson, J. D., Pope, I. A., Smowton, P. M., Blood, P., Lynch, R. J., Hill, G., . . . Parbrook, P. J. (2005). The role of acceptor anneal temperature on the performance of InGaN/GaN quantum well light emitting diodes. In Proceedings of SPIE – The International Society for Optical Engineering 5722 (pp. 425-430). doi:10.1117/12.591897
  • Hung, W. C., Wang, T., Lin, H. -C., Chen, G. -T., Chyi, J. -I., & Cullis, A. G. (2005). Focused ion beam micromilling of GaN photonic devices with gas enhanced etching techniques. In Microscopy of Semiconducting Materials 107 (pp. 423-426). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000237833300090&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0bfafa3ff357b450f062b62b10c587b7
  • Alyamani, A., Sanvitto, D., Wang, T., Parbrook, P. J., Whittaker, D. M., Ross, I. M., . . . Skolnick, M. S. (2005). AlGaN-based Bragg mirrors and hybrid microcavities for the ultra-violet spectral region. In physica status solidi (c) 2 (pp. 813-816). doi:10.1002/pssc.200460341


2004

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  • Wang, T., Parbrook, P. J., Whitehead, M. A., Fan, W. H., & Fox, A. M. (2004). Study of stimulated emission from InGaN/GaN multiple quantum well structures. Journal of Crystal Growth, 273(1-2), 48-53. doi:1016/j.jcrysgro.2004.06.061
  • Liu, Y. H., Li, H. D., Ao, J. P., Lee, Y. B., Wang, T., & Sakai, S. (2004). Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes. Journal of Crystal Growth, 268(1-2), 30-34. doi:1016/j.jcrysgro.2004.04.103
  • Wang, T., Lynch, R. J., Parbrook, P. J., Butté, R., Alyamani, A., Sanvitto, D., . . . Skolnick, M. S. (2004). High-reflectivity Al[sub x]Ga[sub 1−x]N∕Al[sub y]Ga[sub 1−y]N distributed Bragg reflectors with peak wavelength around 350 nm. Applied Physics Letters, 85(1), 43. doi:1063/1.1766404
  • Wang, T., Parbrook, P. J., Harrison, C. N., Ao, J. P., & Ohno, Y. (2004). Highly improved performance of a 350nm ultraviolet light-emitting diode containing AlxGa1−xN/AlyGa1−yN distributed Bragg reflectors. Journal of Crystal Growth, 267(3-4), 583-587. doi:1016/j.jcrysgro.2004.04.029
  • Wang, T., Parbrook, P. J., Fan, W. H., & Fox, A. M. (2004). Optical investigation of InGaN/GaN multiple-quantum wells under high excitation. APPL PHYS LETT, 84(25), 5159-5161. doi:1063/1.1763977
  • Fan, W. H., Olaizola, S. M., Wells, J. P. R., Fox, A. M., Wang, T., Parbrook, P. J., . . . Skolnick, M. S. (2004). Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells. APPL PHYS LETT, 84(16), 3052-3054. doi:1063/1.1707226
  • O’Neill, J. P., Ross, I. M., Cullis, A. G., Wang, T., & Parbrook, P. J. (2004). Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells (vol 83, pg 1965, 2003). APPL PHYS LETT, 84(9), 1612. doi:1063/1.1650558
  • Kudrawiec, R., Sek, G., Sitarek, P., Ryczko, K., Misiewicz, J., Wang, T., & Forchel, A. (2004). Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures. In Thin Solid Films 450 (pp. 71-74). doi:10.1016/j.tsf.2003.10.054
  • Cullis, A. G., Norris, D. J., O’Neill, J. P., Ross, I. M., Migliorato, M. A., Hopkinson, M., . . . Walther, T. (2004). Segregation in compound semiconductors: the Stranski-Krastanow epitaxial transition and electron beam damage processes. In D. Schryvers, J. P. Timmermans, & G. van Tendeloo (Eds.), 13th European Microscopy Congress (EMC 2004) 2 (Materials Sciences) (pp. 417-418). Herentals: Belgian Society for Microscopy, Liege.
  • Sasaki, A., Nishizuka, K., Wang, T., Sakai, S., Kaneta, A., Kawakami, Y., & Fujita, S. (2004). Radiative carrier recombination dependent on temperature and well width of InGaN/GaN single quantum well. Solid State Communications, 129(1), 31-35. doi:1016/j.ssc.2003.09.018
  • O’Neill, J. P., Ross, I. M., Cullis, A. G., Wang, T., & Parbrook, P. J. (2004). Erratum: Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells (Applied Physics Letters (2003) 83 (1965) DOI: 10.1063/1.1650558). Applied Physics Letters, 84(9), 1612. doi:1063/1.1650558


2003

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  • Vaitkus, J., Gaubas, E., Shirahama, T., Sakai, S., Wang, T., Smith, K. M., & Cunningham, W. (2003). Space charge effects, carrier capture transient behaviour and α particle detection in semi-insulating GaN. In Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 514 (pp. 141-145). doi:10.1016/j.nima.2003.08.096
  • Fan, W. H., Olaizola, S. M., Wang, T., Parbrook, P. J., Wells, J. P. R., Mowbray, D. J., . . . Fox, A. M. (2003). Carrier capture times in InGaN/GaN multiple quantum wells. In PHYSICA STATUS SOLIDI B-BASIC RESEARCH 240 (pp. 364-367). doi:10.1002/pssb.200303389
  • O’Neill, J. P., Ross, I. M., Cullis, A. G., Wang, T., & Parbrook, P. J. (2003). Electron-beam-induced segregation in InGaN/GaN multiple-quantum wells. APPL PHYS LETT, 83(10), 1965-1967. doi:1063/1.1606105
  • Vaitkus, J., Cunningham, W., Gaubas, E., Rahman, M., Sakai, S., Smith, K. M., & Wang, T. (2003). Semi-insulating GaN and its evaluation for α particle detection. In Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 509 (pp. 60-64). doi:10.1016/S0168-9002(03)01550-X
  • Ao, J. P., Wang, T., Kikuta, D., Liu, Y. H., Sakai, S., & Ohno, Y. (2003). AlGaN/GaN high electron mobility transistor with thin buffer layers. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(4 A), 1588-1589.
  • Ao, J. P., Wang, T., Kikuta, D., Liu, Y. H., Sakai, S., & Ohno, Y. (2003). AlGaN/GaN high electron mobility transistor with thin buffer layers. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 42(4A), 1588-1589. doi:1143/JJAP.42.1588
  • Vaitkus, J. V., Gaubas, E., Sakai, S., Lacroix, Y., Wang, T., Smith, K. M., . . . Cunningham, W. (2003). Role of Potential Barriers in Epitaxial Layers of Semi-Insulating GaN Layers. In Solid State Phenomena 93 (pp. 301-306).
  • Halsall, M. P., Harmer, P., Parbrook, P. J., Wang, T., & Wells, J. -P. R. (2003). Photoluminescence of single InGaN quantum dots grown at low surface densities by MOVPE. In physica status solidi (c) 0 (pp. 2721-2724). doi:10.1002/pssc.200303525
  • O’Neill, J. P., Ross, I. M., Cullis, A. G., Wang, T., & Parbrook, P. J. (2003). Nano-clustering anomalies in InGaN/GaN multiple quantum well structures. In A. G. Cullis, & P. A. Midgley (Eds.), MICROSCOPY OF SEMICONDUCTING MATERIALS 2003 (pp. 297-300).
  • Wang, T., Parbrook, P. J., & Whitehead, M. A. (2003). MOCVD growth and optical investigation of the AlInGaN quaternary system. In Physica Status Solidi C: Conferences (pp. 2019-2022). doi:1002/pssc.200303472
  • Li, H. D., Wang, T., Jiang, N., Liu, Y. H., Bai, J., & Sakai, S. (2003). Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy. Journal of Crystal Growth, 247(1-2), 28-34. doi:1016/S0022-0248(02)01913-9
  • Parbrook, P. J., Wang, T., Whitehead, M. A., Harrison, C. N., Lynch, R. J., & Murray, R. T. (2003). Crack formation and development in AlGaN/GaN structures. In physica status solidi (c) 0 (pp. 2055-2058). doi:10.1002/pssc.200303546
  • Amabile, D., Martin, R. W., Wang, T., Whitehead, M. A., & Parbrook, P. J. (2003). Compositional analysis of AlInGaN quaternary layers grown by metalorganic vapour phase epitaxy. In physica status solidi (c) 0 (pp. 2478-2481). doi:10.1002/pssc.200303515


2002

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  • Bai, J., Wang, T., Liu, Y., Naoi, Y., Li, H., & Sakai, S. (2002). Influence of pyramidal defects on photoluminescence of Mg-doped AlGaN/GaN superlattice structures. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(10), 5909-5911.
  • Lee, Y. B., Wang, T., Liu, Y. H., Ao, J. P., Li, H. D., Sato, H., . . . Sakai, S. (2002). Fabrication of high-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer. Japanese Journal of Applied Physics, Part 2: Letters, 41(10 A).
  • Lee, Y. B., Wang, T., Liu, Y. H., Ao, J. P., Li, H. D., Sato, H., . . . Sakai, S. (2002). Fabrication of high-output-power AlGaN/GaN-based UV-Light-Emitting diode using a Ga droplet layer. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(10A), L1037-L1039. doi:1143/JJAP.41.L1037
  • Wang, T., Liu, Y. H., Lee, Y. B., Ao, J. P., Bai, J., & Sakai, S. (2002). 1 mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348 nm grown on sapphire substrate. Applied Physics Letters, 81(14), 2508. doi:1063/1.1510967
  • Lee, Y. B., Wang, T., Liu, Y. H., Ao, J. P., Izumi, Y., Lacroix, Y., . . . Sakai, S. (2002). High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 41(7 A), 4450-4453.
  • Lee, Y. B., Wang, T., Liu, Y. H., Ao, J. P., Izumi, Y., Lacroix, Y., . . . Sakai, S. (2002). High-performance 348 nm AlGaN/GaN-based ultraviolet-light-emitting diode with a SiN buffer layer. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 41(7A), 4450-4453. doi:1143/JJAP/41.4450
  • Li, H. D., Wang, T., Liu, Y., Ao, J. P., & Sakai, S. (2002). V-shaped defects in AlGaN/GaN superlattices grown on thin undoped-GaN layers on sapphire substrate. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 41(6B), L732-L735. doi:1143/JJAP.41.L732
  • Li, H., Wang, T., Liu, Y., Ao, J., & Sakai, S. (2002). V-shaped defects in AlGaN/GaN superlattices grown in thin undoped-GaN layers on sapphire substrate. Japanese Journal of Applied Physics, Part 2: Letters, 41(6 B).
  • Wang, T., Liu, Y. H., Lee, Y. B., Izumi, Y., Ao, J. P., Bai, J., . . . Sakai, S. (2002). Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes. Journal of Crystal Growth, 235(1-4), 177-182. doi:1016/S0022-0248(01)01918-2
  • Vaitkus, J., Gaubas, E., Kažukauskas, V., Lacroix, Y., Sakai, S., Smith, K., . . . Wang, T. (2002). Space charge effects and carrier capture transient behaviour in semi-insulating GaAs and GaN. In IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC (pp. 185-189).
  • Akimov, A. V., Cavill, S. A., Kent, A. J., Stanton, N. M., Wang, T., & Sakai, S. (2002). Phonon emission by photoexcited carriers in InGaN/GaN multiple quantum wells. Journal of Physics: Condensed Matter, 14(13), 3445-3455. doi:1088/0953-8984/14/13/304
  • Sakai, S., Wang, T., Wang, H. X., & Bai, J. (2002). MOCVD Growth of Wide-bandgap Nitride Semiconductors. In Proceedings of SPIE – The International Society for Optical Engineering 83 CR (pp. 47-76).


2001

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  • Chung, S. H., Park, J. W., Kim, S. T., Wang, T., & Sakai, S. (2001). Annealing effect of oxygen on p-GaN epilayers grown by MOCVD. Journal of the Korean Physical Society, 39(SUPPL. Part 1).
  • Li, H. D., Wang, T., Lacroix, Y., Jiang, N., & Sakai, S. (2001). Influence of inversion domains on formation of V-shaped pits in GaN films. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 40(11B), L1254-L1256. doi:1143/JJAP.40.L1254
  • Li, H., Wang, T., Lacroix, Y., Jiang, N., & Sakai, S. (2001). Influence of inversion domains on formation of V-shaped pits in GaN films. Japanese Journal of Applied Physics, Part 2: Letters, 40(11 B).
  • Sęk, G., Ryczko, K., Misiewicz, J., Bayer, M., Wang, T., & Forchel, A. (2001). Influence of Built-in Electric Field on Forbidden Transitions in In x Ga 1-x As/GaAs Double Quantum Well by Three-Beam Photoreflectance. In Acta Physica Polonica A 100 (pp. 417-424). doi:10.12693/APhysPolA.100.417
  • Bai, J., Wang, T., Li, H. D., Jiang, N., & Sakai, S. (2001). (0001) oriented GaN epilayer grown on sapphire by MOCVD. Journal of Crystal Growth, 231(1-2), 41-47. doi:1016/S0022-0248(01)01443-9
  • Bai, J., Wang, T., & Sakai, S. (2001). Study of the strain relaxation in InGaN/GaN multiple quantum well structures. Journal of Applied Physics, 90(4), 1740. doi:1063/1.1389330
  • Bai, J., Wang, T., & Sakai, S. (2001). Photoluminescence study on InGaN/GaN quantum well structure grown on (112̄0) sapphire substrate. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(7), 4445-4449.
  • Wang, T., Bai, J., & Sakai, S. (2001). Modulation-doping influence on the photoluminescence from the two-dimensional electron gas of AlxGa1-xN/GaN heterostructures. Physical Review B – Condensed Matter and Materials Physics, 63(20), 2053201-2053204.
  • Lee, K. J., Harris, J. J., Kent, A. J., Wang, T., Sakai, S., Maude, D. K., & Portal, J. -C. (2001). Investigation of phonon emission processes in an AlGaN/GaN heterostructure at low temperatures. Applied Physics Letters, 78(19), 2893. doi:1063/1.1367310
  • Harris, J. J., Lee, K. J., Wang, T., Sakai, S., Bougrioua, Z., Moerman, I., . . . Portal, J. -C. (2001). Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures. Semiconductor Science and Technology, 16(5), 402-405. doi:1088/0268-1242/16/5/321
  • Wang, T., Bai, J., Sakai, S., & Ho, J. K. (2001). Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes. Applied Physics Letters, 78(18), 2617. doi:1063/1.1368374
  • Wang, T., Bai, J., & Sakai, S. (2001). Influence of InGaN/GaN quantum-well structure on the performance of light-emitting diodes and laser diodes grown on sapphire substrates. Journal of Crystal Growth, 224(1-2), 5-10. doi:1016/S0022-0248(01)00748-5
  • Harris, J. J., Lee, K. J., Maude, D. K., Portal, J. -C., Wang, T., & Sakai, S. (2001). Phase diagram for the quantum Hall effect in a high-mobility AlGaN/GaN heterostructure. Journal of Physics: Condensed Matter, 13(8), L175-L181. doi:1088/0953-8984/13/8/102
  • Bai, J., Wang, T., Izumi, Y., & Sakai, S. (2001). A study of dislocations in InGaN/GaN multiple-quantum-well structure grown on () sapphire substrate. Journal of Crystal Growth, 223(1-2), 61-68. doi:1016/S0022-0248(00)01013-7
  • Akimov, A. V., Cavill, S. A., Kent, A. J., Stanton, N. M., Wang, T., & Sakai, S. (2001). Phonon and photon emission from optically excited InGaN/GaN multiple quantum wells. Physica Status Solidi (B) Basic Research, 228(1), 107-110. doi:1002/1521-3951(200111)228:1<107::AID-PSSB107>3.0.CO;2-2
  • Stanton, N. M., Kent, A. J., Cavill, S. A., Akimov, A. V., Lee, K. J., Harris, J. J., . . . Sakai, S. (2001). Energy relaxation by warm two-dimensional electrons in a GaN/AlGaN heterostructure. Physica Status Solidi (B) Basic Research, 228(2), 607-611. doi:1002/1521-3951(200111)228:2<607::AID-PSSB607>3.0.CO;2-I


2000

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  • Sakai, S., Wang, T., Morishima, Y., & Naoi, Y. (2000). A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE. In Journal of Crystal Growth 221 (pp. 334-337). doi:10.1016/S0022-0248(00)00709-0
  • Bai, J., Wang, T., & Sakai, S. (2000). Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures. Journal of Applied Physics, 88(8), 4729. doi:1063/1.1311831
  • Wang, T., Bayer, M., Forchel, A., Gippius, N. A., & Kulakovskii, V. (2000). Magneto-optical study of excitonic states in multiple coupled quantum wells. Physical Review B, 62(11), 7433-7439. doi:1103/PhysRevB.62.7433
  • Wang, T., Nakagawa, D., Shirahama, T., Bai, J., & Sakai, S. (2000). SC-7-9 The characterization of AlGaN/GaN Heterostructures grown by MOCVD on sapphire substrates. Proceedings of the Society Conference of IEICE, 2000(2), 151-152.
  • Wang, H. X., Wang, T., Mahanty, S., Komatsu, F., Inaoka, T., Nishino, K., & Sakai, S. (2000). Growth of GaN layer by metal-organic chemical vapor deposition system with a novel three-flow reactor. Journal of Crystal Growth, 218(2-4), 148-154. doi:1016/S0022-0248(00)00553-4
  • Lachab, M., Youn, D. -H., Qhalid Fareed, R. S., Wang, T., & Sakai, S. (2000). Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition. Solid-State Electronics, 44(9), 1669-1677. doi:1016/S0038-1101(00)00072-1
  • Chung, S. H., Lachab, M., Wang, T., Lacroix, Y., Basak, D., Fareed, Q., . . . Sakai, S. (2000). Effect of oxygen on the activation of Mg acceptor in GaN epilayers grown by metalorganic chemical vapor deposition. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 39(8), 4749-4750.
  • Davidson, J. A., Dawson, P., Wang, T., Sugahara, T., Orton, J. W., & Sakai, S. (2000). Photoluminescence studies of InGaN/GaN multi-quantum wells. Semiconductor Science and Technology, 15(6), 497-505. doi:1088/0268-1242/15/6/302
  • Wang, T., Bai, J., Sakai, S., Ohno, Y., & Ohno, H. (2000). Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time. Applied Physics Letters, 76(19), 2737. doi:1063/1.126460
  • Wang, T., Morishima, Y., Naoi, N., & Sakai, S. (2000). A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate. Journal of Crystal Growth, 213(1-2), 188-192. doi:1016/S0022-0248(00)00373-0
  • Wang, T., Shirahama, T., Sun, H. B., Wang, H. X., Bai, J., Sakai, S., & Misawa, H. (2000). Influence of buffer layer and growth temperature on the properties of an undoped GaN layer grown on sapphire substrate by metalorganic chemical vapor deposition. Applied Physics Letters, 76(16), 2220. doi:1063/1.126302
  • Sȩk, G., Ryczko, K., Kubisa, M., Misiewicz, J., Bayer, M., Wang, T., . . . Forchel, A. (2000). Photoreflectance spectroscopy of coupled InxGa1−xAs/GaAs quantum wells. In Thin Solid Films 364 (pp. 220-223). doi:10.1016/S0040-6090(99)00923-2
  • Wang, T., Saeki, H., Bai, J., Shirahama, T., Lachab, M., Sakai, S., & Eliseev, P. (2000). Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures. Applied Physics Letters, 76(13), 1737. doi:1063/1.126151
  • Lachab, M., Nozaki, M., Wang, J., Ishikawa, Y., Fareed, Q., Wang, T., . . . Sakai, S. (2000). Selective fabrication of InGaN nanostructures by the focused ion beam/metalorganic chemical vapor deposition process. Journal of Applied Physics, 87(3), 1374. doi:1063/1.372023
  • Fewster, P. F., Andrew, N. L., Hughes, O. H., Staddon, C., Foxon, C. T., Bell, A., . . . Moerman, I. (2000). X-ray studies of group III-nitride quantum wells with high quality interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 18(4), 2300. doi:1116/1.1306332
  • Wang, T., Bai, J., Sakai, S., IPAP., IPAP., & IPAP. (2000). The investigation on the emission mechanism of InGaN/GaN quantum well structure. In PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 (pp. 524-527). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000171608500133&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0bfafa3ff357b450f062b62b10c587b7
  • Sun, H. B., Juodkazis, S., Eliseev, P. G., Sugahara, T., Wang, T., Matsuo, S., . . . Misawa, H. (2000). Laser-induced damage threshold and laser processing of GaN. In HIGH-POWER LASER ABLATION II 3885 (pp. 311-322). doi:10.1117/12.376976
  • Sakai, S., Saeki, F., Izumi, Y., Wang, T., IPAP., IPAP., & IPAP. (2000). Indium silicon co-doping in AlGaN/GaN multiple quantum wells. In PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 (pp. 637-639). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000171608500162&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0bfafa3ff357b450f062b62b10c587b7
  • Wang, T., Bai, J., Sakai, S., IPAP., IPAP., & IPAP. (2000). Comparison of the optical properties in InGaN/GaN quantum well structures grown on (0001) and (11(2)over-bar0) sapphire substrates. In PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS 1 (pp. 382-385). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000171608500098&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0bfafa3ff357b450f062b62b10c587b7


Pre 2000

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  • Wang, T., Ohno, Y., Lachab, M., Nakagawa, D., Shirahama, T., Sakai, S., & Ohno, H. (1999). MOCVD growth and transport investigation of two-dimensional electron gas in AlGaN/GaN heterostructures on sapphire substrates. Physica Status Solidi (B) Basic Research, 216(1), 743-748.
  • Wang, T., Nakagawa, D., Lachab, M., Sugahara, T., & Sakai, S. (1999). Investigation of the optical properties in InGaN/GaN quantum well structure. In Physica Status Solidi (B) Basic Research 216 (pp. 279-285).
  • Sugahara, T., Sakai, S., Lachab, M., Fareed, R. S. Q., Tottori, S., & Wang, T. (1999). Investigation of InGaN/GaN quantum wells grown on sapphire and bulk GaN substrates. In Physica Status Solidi (B) Basic Research 216 (pp. 273-277).
  • SUGAHARA, T., FAREED, R. S. Q., WANG, T., NAOI, Y., NISHINO, K., & SAKAI, S. (1999). Cathodoluminescence Characterization of Dislocation Property in Nitride Semiconductors. Electron-microscopy, 34, 225-228.
  • Mahanty, S., Hao, M., Sugahara, T., Fareed, R. S. Q., Morishima, Y., Naoi, Y., . . . Sakai, S. (1999). V-shaped defects in InGaN/GaN multiquantum wells. Materials Letters, 41(2), 67-71. doi:1016/S0167-577X(99)00105-6
  • Wang, H. X., Wang, T., Lachab, M., Ishikawa, Y., Hao, M. S., Oyama, K., . . . Tominaga, K. (1999). Growth of a GaN layer on a glass substrate by metal organic chemical vapor deposition. Journal of Crystal Growth, 206(3), 241-244. doi:1016/S0022-0248(99)00336-X
  • Wang, J., Nozaki, M., Lachab, M., Ishikawa, Y., Qhalid Fareed, R. S., Wang, T., . . . Sakai, S. (1999). Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots. Applied Physics Letters, 75(7), 950. doi:1063/1.124564
  • Wang, T., & Forchel, A. (1999). Experimental and theoretical study of strain-induced AlGaAs/GaAs quantum dots using a self-organized GaSb island as a stressor. Journal of Applied Physics, 86(4), 2001. doi:1063/1.371000
  • Wang, T., Ohno, Y., Lachab, M., Nakagawa, D., Shirahama, T., Sakai, S., & Ohno, H. (1999). Electron mobility exceeding 10[sup 4] cm[sup 2]/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate. Applied Physics Letters, 74(23), 3531. doi:1063/1.124151
  • Wang, T., Lachab, M., Nakagawa, D., Shirahama, T., & Sakai, S. (1999). Investigation of two-dimensional electron gas in AlGaN/GaN heterostructures grown by metalorganic chemical vapor deposition (MOCVD). Journal of Crystal Growth, 203(3), 443-446. doi:1016/S0022-0248(99)00110-4
  • Wang, T., Nakagawa, D., Lachab, M., Sugahara, T., & Sakai, S. (1999). Optical investigation of InGaN/GaN multiple quantum wells. Applied Physics Letters, 74(21), 3128. doi:1063/1.124084
  • Wang, J., Nozaki, M., Lachab, M., Qhalid Fareed, R. S., Ishikawa, Y., Wang, T., . . . Sakai, S. (1999). Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD. Journal of Crystal Growth, 200(1-2), 85-89. doi:1016/S0022-0248(98)00935-X
  • Wang, T., Sugahara, T., Sakai, S., & Orton, J. (1999). The influence of the p-n junction induced electric field on the optical properties of InGaN/GaN/AlGaN light emitting diode. Applied Physics Letters, 74(10), 1376. doi:1063/1.123555
  • Sugahara, T., Hao, M., Wang, T., Nakagawa, D., Naoi, Y., Nishino, K., & Sakai, S. (1999). Phase separation mechanism around dislocation in an InGaN/GaN quantum well structure. In COMPOUND SEMICONDUCTORS 1998 (pp. 645-650). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000177562700105&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0bfafa3ff357b450f062b62b10c587b7
  • Wang, T., & Forchel, A. (1999). Growth of self-organized GaSb islands on a GaAs surface by molecular beam epitaxy. Journal of Applied Physics, 85(5), 2591. doi:1063/1.369625
  • Wang, J., Nozaki, M., Ishikawa, Y., Lachab, M., Fareed, R. S. Q., Wang, T., & Sakai, S. (1999). Formation and optical properties of selectively grown InGaN/GaN nanostructures. In COMPOUND SEMICONDUCTORS 1998 (pp. 829-832). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000177562700135&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0bfafa3ff357b450f062b62b10c587b7
  • Wang, J., Nozakib, Y. Ishikawa, M., Hao, M. S., Morishima, Y., Wang, T., Naoi, Y., & Sakai, S. (1999). Fabrication of nanoscale structures of InGaN by MOCVD lateral overgrowth. Journal of Crystal Growth, 197(1-2), 48-53. doi:1016/S0022-0248(98)00777-5
  • Wang, T., Nakagawa, D., Wang, J., Sugahara, T., & Sakai, S. (1998). Photoluminescence investigation of InGaN/GaN single quantum well and multiple quantum wells. Applied Physics Letters, 73(24), 3571. doi:1063/1.122810
  • Sugahara, T., Hao, M., Wang, T., Nakagawa, D., Naoi, Y., Nishino, K., & Sakai, S. (1998). Role of dislocation in InGaN phase Separation. Japanese Journal of Applied Physics, Part 2: Letters, 37(10 SUPPL. B).
  • Sugahara, T., Hao, M., Wang, T., Nakagawa, D., Naoi, Y., Nishino, K., & Sakai, S. (1998). Role of dislocation in InGaN phase separation. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 37(10B), L1195-L1198. doi:1143/JJAP.37.L1195
  • Wang, T., Bayer, M., & Forchel, A. (1998). Effect of the hole subband mixing on the spin splitting of heavy-hole excitons in coupled double quantum wells. Physical Review B, 58(16), R10183-R10186. doi:1103/PhysRevB.58.R10183
  • Wang, T., Kieseling, F., & Forchel, A. (1998). Transition from direct to indirect band structure induced by the AlSb layer inserted in the GaSb/AlSb quantum well. Physical Review B, 58(7), 3594-3596. doi:1103/PhysRevB.58.3594
  • Wang, T., Sugahara, T., & Sakai, S. (1998). The Quantum-Confined-Stark-Effect on the luminescence properties of InGaN/GaN/AlGaN pn junction structure. Technical report of IEICE. LQE, 98(109), 67-72.
  • Wang, T., Sugahara, T., Sakai, S., & Orton, J. (1998). Optical investigation of the high quality InGaN/GaN MQW by MOCVD with three layer laminar flow gas injection. In BLUE LASER AND LIGHT EMITTING DIODES II (pp. 357-360). Retrieved from http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000079631200086&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=0bfafa3ff357b450f062b62b10c587b7
  • Wang, T., & Forchel, A. (1998). Growth and optical investigation of strain-induced AlGaAs/GaAs quantum dots using self-organized GaSb islands as a stressor. Applied Physics Letters, 73(13), 1847. doi:1063/1.122302
  • Wang T., Zhang LD., & Mo CM. (1994). A study on growth and crystallization behavior of nanostructured amorphous silicon nitride. NanoStructured Materials, 4(2), 207-213. doi:1016/0965-9773(94)90079-5
  • Wang, T., Zhang LD., Mo CM., Fan XJ., & Hu JT. (1993). The Study of Dangling Bond In Nanostructured Amorphous Silicon Nitride By ESR. Journal of Applied Physics, 74(10), 6313-6316. Retrieved from http://scitation.aip.org/content/aip/journal/jap/74/10/10.1063/1.355152
  • Wang, T., Zhang LD., & Mo CM. (1993). Anomalous Dielectric Behavior in Nanometer-Sized Amorphous Silicon Nitride. Phys. Lett., 10(11), 676-679. Retrieved from http://cpl.iphy.ac.cn/EN/volumn/volumn_1404.shtml
  • Wang, T., Zhang LD., Hu JT., & Mo CM. (1993). A study of defects in nanostructured amorphous silicon nitride. Physica Status Solidi (A) Applications and Materials, 139(2), 303-307. doi:1002/pssa.2211390204
  • Zhang LD., Mo CM., Xie CY., & Wang, T. (1993). Gap States in Nanometer-sized Amorphous Silicon Nitride Solids. Journal of Applied Physics, 73(10), 5185-5188. Retrieved from http://scitation.aip.org/content/aip/journal/jap/73/10/10.1063/1.353796
  • Zhang LD., Mo CM., Wang T., Cai SZ., & Xie CY. (1993). Structure and Bond Properties of Compacted and Heat-Treated Silicon Nitride Particles. Physica Status Solidi (A) Applications and Materials, 136(2), 291-299. doi:1002/pssa.2211360203