“Advances Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire” B. Xu, L. Jiu, Y. Gong, Y. Zhang, L. C. Wang, J. Bai, and T. Wang AIP Advances 7, 045009 (2017); doi: http://dx.doi.org/10.1063/1.4981137 Abstract (11-22) semi-polar GaN is expected to
This month the Centre for GaN Materials and Devices has published two papers in Applied Physics Letters. In “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition” we provide a deep insight into the optical properties of semi-polar AlGaN,
“Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates” has been published in Applied Physics Letters. The paper by members of the Centre for GaN Materials and Devices appears in Volume 109, Issue 24 (DOI: 10.1063/1.4972403).
In this paper, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates” we demonstrate semipolar InGaN LEDs with excellent performance in a wide spectral region from green to amber, grown on our overgrown semipolar (11-22) GaN. The