There is an increasing demand for developing AR and VR microdisplays with high resolution, high efficiency and zero-cross talk, where ultrasmall, ultrahigh-efficient microLEDs are the key components and are extremely challenging to achieve. Our latest paper published by ACS Nano demonstrates that Sheffield
Despite significant progress obtained in the last two decades, the performance of GaN electronic devices is far from the limits of this material, which we believe is due to the challenges in material growth. Therefore, it is crucial to understand
There is a significantly increasing demand for developing III-nitride micro light-emitting diodes (μLEDs) for a wide range of applications such as autodisplay, next generation TV, microdisplays for smart phones and smart watches, and Augmented Reality and Virtual Reality (AR and
Published on 30 August 2017 in Scientific Reports, ‘Monolithically multi-color lasing from an InGaN microdisk on a Si substrate‘ is the result of a collaboration between the University of Sheffield and the University of Bristol and is supported by an EPSRC
“Advances Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire” B. Xu, L. Jiu, Y. Gong, Y. Zhang, L. C. Wang, J. Bai, and T. Wang AIP Advances 7, 045009 (2017); doi: http://dx.doi.org/10.1063/1.4981137 Abstract (11-22) semi-polar GaN is expected to
This month the Centre for GaN Materials and Devices has published two papers in Applied Physics Letters. In “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition” we provide a deep insight into the optical properties of semi-polar AlGaN,
“Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates” has been published in Applied Physics Letters. The paper by members of the Centre for GaN Materials and Devices appears in Volume 109, Issue 24 (DOI: 10.1063/1.4972403).
In this paper, “(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates” we demonstrate semipolar InGaN LEDs with excellent performance in a wide spectral region from green to amber, grown on our overgrown semipolar (11-22) GaN. The