header_logo

Centre for GaN Materials and Devices

Cutting-edge technologies and advanced research on III-nitride materials and devices

Menu

  • Home
  • News
  • About
    • About the Centre
    • Media
    • Contact us
  • Team
    • GaN Centre team
    • Vacancies
  • Publications
    • Publication highlights
    • Publications by year
    • Book chapters
  • Research
    • Research Activities
    • Facilities
    • Awards
  • International
  • Workshop

jobs

PhD opportunity – Transfer printing of novel III-nitride based hybrid optoelectronics

Transfer printing is a key emerging technology in the field of semiconductor device fabrication. In this project, novel GaN based optoelectronic devices will be developed utilizing transfer printing techniques to stack III-nitride materials on non-native substrates and combine these III-nitride

gan-admin November 18, 2016 jobs Read more

Fully-funded PhD studentship opportunities – III-nitride semiconductors and devices

Applications are invited for 2 fully-funded 3.5 year PhD studentships to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors. Find

gan-admin September 27, 2016November 18, 2016 jobs Read more

Latest

  • PhD success for Yun Zhang November 10, 2017
  • Professor Tao Wang at ISSLED 2017 October 3, 2017
  • Dr Rick Smith talks about GaN based optoelectronics September 22, 2017

Contact us

Department of Electronic and Engineering,
3 Solly Street
Sheffield
S1 4DE
United Kingdom

t: +44 (0)114 222 5196

University crest
The University of Sheffield
Western Bank
Sheffield, S10 2TN
UK
Copyright © 2018 Centre for GaN Materials and Devices. Powered by WordPress. Theme: Spacious by ThemeGrill.
  • Home
  • News
  • The University of Sheffield
  • Electronic and Electrical Engineering