Transfer printing is a key emerging technology in the field of semiconductor device fabrication. In this project, novel GaN based optoelectronic devices will be developed utilizing transfer printing techniques to stack III-nitride materials on non-native substrates and combine these III-nitride
Fully-funded PhD studentship opportunities – III-nitride semiconductors and devices
Applications are invited for 2 fully-funded 3.5 year PhD studentships to work on (1) Advanced MOVPE epitaxial growth of novel III-nitride semiconductors and advanced material characterisation (2) Advanced fabrication of the integrated devices combining III-nitride and other III-V semiconductors. Find