The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) will be held in Banff, Canada from 8th-12th October 2017. With a focus on III-nitride devices the symposium enables scientists and engineers from academia and industry to meet and
This month the Centre for GaN Materials and Devices has published two papers in Applied Physics Letters. In “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition” we provide a deep insight into the optical properties of semi-polar AlGaN,
On Wednesday 11th January 2017 representatives from the semiconductor industry joined us for our first Compound Semiconductor Open Day. The event provided a unique opportunity to meet researchers from the Centre for GaN Materials and Devices and the Advanced Detector
Development of high-quality semi-polar GaN for long wavelength emitters, Session 2: Growth II, Monday 30 January 2017 (11-22) semi-polar GaN is particularly important for achieving longer emission wavelength such as green and yellow emitters that have found wide applications in
The publication of “Polarized white light from hybrid organic/III-nitrides grating structures” in Scientific Reports this month reveals that a novel nanofabrication technique from the GaN centre has resulted in highly polarized white light emission. Read the full paper.
Xiang Yu, one of our Research Centre students has passed his PhD viva. Well done Xiang.
Dr Modestos Athanasiou, Research Associate at the Centre for GaN Materials and Devices has won the “2016 Outstanding Poster Award” at the International Workshop on Nitride Semiconductors (IWN 2016) in Florida. The poster – “Monolithically Integrated White Light Microdisk Laser
University of Sheffield Vice-Chancellor Professor Sir Keith Burnett will visit Shanghai and Nanjing next week to develop existing collaborations and meet with Chinese partners in the University’s award-winning Confucius Institute – twice named a Global Confucius Institute of the Year.