This event is designed for photonics and electronics companies who are considering a research collaboration to harness the innovation opportunities of III-nitride semiconductors. Join us in Sheffield on Monday 13th January 2020 to discover more about: our latest technology and
Suneal Ghataora has successfully defended his PhD viva. His research focused on fabrication and characterisation of hybrid organic and inorganic III-Nitride semiconductor light emitting opto-electronic devices. Congratulations to Suneal.
It’s long been known that the unique properties of III-nitride semiconductor materials make them ideally suited to microelectronics and optoelectronics. But they also have a critical role to play in addressing some of the major global challenges through advances in
The EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing aims to supply the UK with scientists and engineers with relevant skills and knowledge for the compound semiconductor industry. Students will spend their first year in Cardiff on a Compound
Congratulations to Dr Modestos Athanasiou who has been awarded a Marie Skłodowska-Curie Individual Fellowship. Dr Athanasiou, formerly a Research Associate at our research centre also completed his PhD studies at The University of Sheffield.
The Engineering and Physical Sciences Research Council (EPSRC) announced 75 new Centres for Doctoral Training (CDTs) last week and we’re delighted to be part of the new CDT in Compound Semiconductor Manufacturing. The CDT, which is an alliance of four
This event is designed for photonics and electronics companies who are considering a research collaboration to harness the innovation opportunities of III-nitride semiconductors. The Centre for GaN Materials and Devices is part of the Future Compound Semiconductor Manufacturing Hub which
We are currently advertising two posts within the centre: Senior Technician To find out more visit The University of Sheffield jobs website and search for job reference number: UOS019203 Research Associate in III-nitride Materials and Devices To find out more
Yun Zhang has successfully defended his PhD viva. His research focused on Optical and micro-structural investigation of non-polar and semi-polar III-nitride materials by multiple characterization methods involving photoluminescence (PL), photoluminescence excitation (PLE), time-resolved PL, and transmission electron microscopy (TEM) We wish
Professor Tao Wang will give an invited talk “Non-Polar and Semi-Polar GaN for Photonics and Electronics” on Monday 9th October at ISSLED 2017. With a focus on III-nitride devices the symposium enables scientists and engineers from academia and industry to