• T Wang. Chapter 5: “MOCVD growth of nitride DBRs for optoelectronics“
    Handbook of Optical Microcavities, Editor: Prof. Anthony H W Choi, page 157-210, (2014)
    Publisher: Pan Stanford Publishing, Singapore
  • T Wang. Chapter 3: “Nitride emitters-recent progress”, Wide Bandgap Light Emitting Materials and Devices, Editor: Profs Neumark, Kuskovsky and Jiang, page 109-144, (2007)
    Publisher: Wiley-VCH Verlag, Germany, doi:10.1002/9783527617074.ch3
  • T Wang. Chapter 9: “Optical investigation of InGaN related quantum well structures” GaN-based Materials: Epitaxy and Characterization, Editor: Prof Zhe Chuan FENG, page 305-343, (2006)
    Publisher: Imperial College Press (ICP), UK, http://www.worldscientific.com/worldscibooks/10.1142/p437#t=aboutBook
  • S Sakai, T Wang, H X Wang and J Bai. The Chapter: “MOCVD growth of wide-bandgap nitride semiconductors”, Gallium Nitride based Technology, Critical Reviews Series, Editor: Prof. M Osinski, Publisher: SPIE OPTICAL ENGINEERING PRESS, Washington, USA (2002). Proceeding of SPIE, Critical Review Vol.83, 47-76 (2002)

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