“Advances Stimulated emission from semi-polar (11-22) GaN overgrown on sapphire” B. Xu, L. Jiu, Y. Gong, Y. Zhang, L. C. Wang, J. Bai, and T. Wang AIP Advances 7, 045009 (2017); doi: http://dx.doi.org/10.1063/1.4981137 Abstract (11-22) semi-polar GaN is expected to
University of Sheffield President and Vice-Chancellor Professor Sir Keith Burnett has signed an agreement with Professor Dr Kamal Nasharuddin Mustapha, Vice-Chancellor of UNITEN University in Malaysia, to build research partnerships and student and faculty exchanges between the two institutions in
The 11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017) will be held in Banff, Canada from 8th-12th October 2017. With a focus on III-nitride devices the symposium enables scientists and engineers from academia and industry to meet and
The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017) will be held in Qingdao, Shandong, China from 24-27 September 2017. The Workshop aims to be a forum for presenting the latest advances in research and technology of wide bandgap semiconductors. Held over
This month the Centre for GaN Materials and Devices has published two papers in Applied Physics Letters. In “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition” we provide a deep insight into the optical properties of semi-polar AlGaN,
On Wednesday 11th January 2017 representatives from the semiconductor industry joined us for our first Compound Semiconductor Open Day. The event provided a unique opportunity to meet researchers from the Centre for GaN Materials and Devices and the Advanced Detector
Development of high-quality semi-polar GaN for long wavelength emitters, Session 2: Growth II, Monday 30 January 2017 (11-22) semi-polar GaN is particularly important for achieving longer emission wavelength such as green and yellow emitters that have found wide applications in
The publication of “Polarized white light from hybrid organic/III-nitrides grating structures” in Scientific Reports this month reveals that a novel nanofabrication technique from the GaN centre has resulted in highly polarized white light emission. Read the full paper.
“Microstructure investigation of semi-polar (11-22) GaN overgrown on differently designed micro-rod array templates” has been published in Applied Physics Letters. The paper by members of the Centre for GaN Materials and Devices appears in Volume 109, Issue 24 (DOI: 10.1063/1.4972403).
Xiang Yu, one of our Research Centre students has passed his PhD viva. Well done Xiang.