The Centre for GaN Materials and Devices develops cutting-edge technologies and performs advanced research on III-nitride materials and devices.

With the aim of bridging the gap between fundamental research and real-world applications the Centre offers the full project life cycle for industry collaboration – from design, advanced epitaxy growth, device fabrication and characterisation to testing. Part of the EPSRC funded Future Compound Semiconductor Manufacturing Hub, and the newly created CDT in Compound Semiconductor Manufacturing the centre is keen to share research insights, build successful partnerships and strengthen links with industry and academia.

The Centre for GaN Materials and Devices is part of the Department of Electronic and Electrical Engineering at The University of Sheffield.

The centre’s research interests include:

Find out more about our research activities and our facilities.

Inside the Centre for GaN Materials and Devices

Find out about our research interests, facilities and opportunities for collaboration in this film about our Centre.