Founded in 2015, The Centre for GaN Materials and Devices aims to develop cutting-edge technologies and perform advanced research on III-nitride materials and devices.

With expertise in advanced metal-organic vapour phase epitaxy (MOVPE) growth and nanofabrication technology the centre has complimentary first-class facilities including two MOVPE epitaxial growth systems, comprehensive optical characterisation systems, device testing systems and device fabrication systems.

The Centre for GaN Materials and Devices is part of the Department of Electronic and Electrical Engineering at The University of Sheffield.