There is a significantly increasing demand for developing III-nitride micro light-emitting diodes (μLEDs) for a wide range of applications such as autodisplay, next generation TV, microdisplays for smart phones and smart watches, and Augmented Reality and Virtual Reality (AR and VR).
Recently published in ACS Photonics, “A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)” demonstrates a completely different approach which allows us to achieve μLEDs with a dimension of down to 3.6 μm and an interpitch of down to 2 μm.
The invention is based on an overgrowth on prepatterned templates with SiO2 microhole arrays, thus eliminating all the drawbacks of the conventional μLED fabrication approaches. As a result, a record peak EQE of 6% at ∼515 nm in the green spectral regions has been achieved on our μLED array bare chips. A high luminance of >107 cd/m2 has been obtained. Temperature-dependent measurements show an internal quantum efficiency of 28% for our μLED array structure.
To find out more read the full paper on the ACS Photonics website.
J. Bai, Y. Cai, P. Feng, P. Fletcher, X. Zhao, C. Zhu, & T. Wang, A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs), ACS Photonics, 7, 2, 411-415, (2020), doi: 10.1021/acsphotonics.9b01351