In June 2018 over 40 delegates from the UK and China attended the workshop which was supported by the Solid-State Lighting Engineering Research Centre (Xi’an Jiaotong University), the Institute of Physics (IOP) and the Centre for GaN Materials and Devices (University of Sheffield).

This workshop provided scholars from China and UK with a forum to carry out extensive discussion on growth technique, structures and properties of materials, optoelectronic devices in wide band-gap semiconductor materials and other fields.

There was also an opportunity to encourage applications for co-operative projects between the China Natural Science Foundation (NSFC) and the UK Engineering and Physical Sciences Research Council (EPSRC), the Royal Society and other British Exchange Projects.

T_wang_chinaUKProfessor Tao Wang (joint workshop Chair) said:

“We hope that by bringing scholars from UK and China together for this event we can encourage knowledge exchange and promote opportunities for collaboration in this exciting and important field of semiconductor research.”

Professor Mike Hounslow, Vice-President and Head of the Faculty of Engineering at The University of Sheffield opened the workshop and welcomed invited speakers from over 20 different UK, Irish and Chinese Universities.




The Centre for GaN Materials and Devices hosts the first China-UK Workshop on Wide Band-gap Semiconductor Materials and Devices