This month the Centre for GaN Materials and Devices has published two papers in Applied Physics Letters.

In “Optical investigation of semi-polar (11-22) AlxGa1-xN with high Al composition” we provide a deep insight into the optical properties of semi-polar AlGaN, which is of significant importance to the development of semi-polar AlGaN based deep ultra-violet (DUV) laser diodes (LDs).

Read the full text: Appl. Phys. Lett. 110, 091102 (2017); doi:

In “Semi-polar (11-22) AlGaN on overgrown GaN on micro-rod templates: Simultaneous management of crystal quality improvement and cracking issue” the results indicate that our overgrowth method is an effective way to both release the strain and improve the crystal quality, which plays an important role in developing semi-polar DUV emitters with a step-change in optical performance.

Fig 1

Read the full text: Appl. Phys. Lett. 110, 082103 (2017); doi:


Advances in Semi-polar (11-22) Aluminium Gallium Nitride (AlGaN) published in Applied Physics Letters