Transfer printing is a key emerging technology in the field of semiconductor device fabrication. In this project, novel GaN based optoelectronic devices will be developed utilizing transfer printing techniques to stack III-nitride materials on non-native substrates and combine these III-nitride semiconductor materials with a range of other functional materials including organic light emitters.

The studentship is fully funded for 3.5 years.

For more details and application information please see

PhD opportunity – Transfer printing of novel III-nitride based hybrid optoelectronics