Centre for GaN Materials and Devices

Cutting-edge technologies and advanced research on III-nitride materials and devices

Recent publications

  • Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method, Y. Cai, X. Yu, S. Shen, X. Zhao, L. Jiu, C. Zhu, J. Bai and T. Wang, Semiconductor Science and Technology, Volume 34, Number 4 (2019), doi: 10.1088/1361-6641/ab08bf
  • Monolithically integrated white light LEDs on (11–22) semi-polar GaN templates, N. Poyiatzis, M. Athanasiou, J. Bai, Y. Gong & T. Wang, , Scientific Reports, Volume 9, 1383 (2019), doi: 10.1038/s41598-018-37008-5
  • Monolithic multiple colour emission from InGaN grown on patterned non-polar GaN, Y. Gong, L. Jiu, J. Bruckbauer, J. Bai, R. W. Martin & T. Wang, , Scientific Reports, Volume 9, 986, (2019), doi: 10.1038/s41598-018-37575-7

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International collaboration

The Joint Research Centre for Wide Bandgap Semiconductor Optoelectronics is a collaborative effort between the University of Sheffield and Nanjing University in China.

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The Centre For GaN Materials and Devices aims to develop cutting-edge technologies and perform advanced research on III-nitride materials and devices.

Founded in 2015, the centre has two MOVPE epitaxial growth systems, comprehensive optical characterisation systems, device testing systems and device fabrication systems. The centre is part of the Department of Electronic and Electrical Engineering at The University of Sheffield.

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