Ultra-small, ultra-efficient, and ultra-compact...
Applications now open: EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing
You get two degrees from our program – an MSc and a PhD – both are fully funded and include a stipend. Apply now for 2020.
- A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs), J. Bai, Y. Cai, P. Feng, P. Fletcher, X. Zhao, C. Zhu, & T. Wang, ACS Photonics (2020), doi: 10.1021/acsphotonics.9b01351
- Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates, J. Bai, L. Jiu, N. Poyiatzis, P. Fletcher, Y. Gong & T. Wang, Scientific Reports, volume 9, Article number: 9770 (2019), doi: 10.1038/s41598-019-46343-0
- Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method, Y. Cai, X. Yu, S. Shen, X. Zhao, L. Jiu, C. Zhu, J. Bai and T. Wang, Semiconductor Science and Technology, Volume 34, Number 4 (2019), doi: 10.1088/1361-6641/ab08bf
- Monolithically integrated white light LEDs on (11–22) semi-polar GaN templates, N. Poyiatzis, M. Athanasiou, J. Bai, Y. Gong & T. Wang, , Scientific Reports, Volume 9, 1383 (2019), doi: 10.1038/s41598-018-37008-5
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Part-funded PhD opportunities in fabrication and characterisation of III-nitride MicroLEDs for next generation display.
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The Joint Research Centre for Wide Bandgap Semiconductor Optoelectronics is a collaborative effort between the University of Sheffield and Nanjing University in China.
The Centre For GaN Materials and Devices develops cutting-edge technologies and performs advanced research on III-nitride materials and devices.
Founded in 2015, the centre has two MOVPE epitaxial growth systems, comprehensive optical characterisation systems, device testing systems and device fabrication systems. The centre is part of the Department of Electronic and Electrical Engineering at The University of Sheffield.