We develop cutting-edge technologies and perform advanced research on III-nitride materials and devices. Based in the Department of Electronic and Electrical Engineering at The University of Sheffield we are keen to share research insights, build successful partnerships and strengthen links with industry and academia.

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Media

Media

Press coverage and features.

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Recent publications

  • Exploring an approach toward the intrinsic limits of GaN electronics, S. Jiang, Y. Cai, P. Feng, S. Shen, X. Zhao, P. Fletcher, V. Esendag, K. Lee & T. Wang, , ACS Appl. Mater. Interfaces (2020), doi: 10.1021/acsami.9b19697
  • A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs), J. Bai, Y. Cai, P. Feng, P. Fletcher, X. Zhao, C. Zhu, & T. Wang, ACS Photonics (2020), doi: 10.1021/acsphotonics.9b01351
  • Optical and polarization properties of nonpolar InGaN-based light-emitting diodes grown on micro-rod templates, J. Bai, L. Jiu, N. Poyiatzis, P. Fletcher, Y. Gong & T. Wang, Scientific Reports, volume 9, Article number: 9770 (2019), doi: 10.1038/s41598-019-46343-0

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Working with industry

Working with industry

We offer the full project life cycle for industry collaboration – from design, advanced epitaxy growth, device fabrication and characterisation to testing.

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PhD opportunities

Applications are invited for a fully-funded 3.5 year PhD studentship to work on fabrication and characterisation of monolithic on-chip integration of III-nitride photonics and electronics.

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EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing

You get two degrees from our program – an MSc and a PhD – both are fully funded and include a stipend.

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