Centre for GaN Materials and Devices – Cutting-edge technologies and advanced research on III-nitride materials and devices

Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width J. Bai, Y. Cai, P. Feng, P. Fletcher, C. Zhu, Y. Tian, and T. Wang, ACS Nano, 14, 6, 6906–6911 (2020), doi: 10.1021/acsnano.0c01180
Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon, Y. Cai, S. Shen, C. Zhu, X. Zhao, J. Bai, and T. Wang, ACS Appl. Mater. Interfaces, Just Accepted Manuscript, 14, 6, 6906–6911 (2020), doi: 10.1021/acsami.0c04890
Optical polarization properties of (11–22) semi-polar InGaN LEDs with a wide spectral range N. Poyiatzis, J. Bai, R. M. Smith, M. Athanasiou, S. Ghataora & T. Wang, Scientific Reports volume 10, Article number: 7191 (2020), doi: 10.1038/s41598-020-64196-w
Exploring an approach toward the intrinsic limits of GaN electronics, S. Jiang, Y. Cai, P. Feng, S. Shen, X. Zhao, P. Fletcher, V. Esendag, K. Lee & T. Wang, ACS Appl. Mater. Interfaces (2020), doi: 10.1021/acsami.9b19697
A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs), J. Bai, Y. Cai, P. Feng, P. Fletcher, X. Zhao, C. Zhu, & T. Wang, ACS Photonics (2020), doi: 10.1021/acsphotonics.9b01351