Centre for GaN Materials and Devices

Cutting-edge technologies and advanced research on III-nitride materials and devices

The Centre For GaN Materials and Devices aims to develop cutting-edge technologies and perform advanced research on III-nitride materials and devices.

Founded in 2015, the centre has two MOVPE epitaxial growth systems, comprehensive optical characterisation systems, device testing systems and device fabrication systems. The centre is part of the Department of Electronic and Electrical Engineering at The University of Sheffield.

Industry Open Day - Tuesday 15th January 2019

This event is designed for photonics and electronics companies who are considering a research collaboration to harness the innovation opportunities of III-nitride semiconductors.

Register now

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Media

Find out about our research interests, facilities, partnerships and opportunities for collaboration in this new film.

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International

The Joint Research Centre for Wide Bandgap Semiconductor Optoelectronics is a collaborative effort between the University of Sheffield and Nanjing University in China.

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Team

We are a team of Academics, Researchers, Technicians and PhD students

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Publication highlights

Publication highlights

The innovations of the research are regularly highlighted in semiconductor magazines and are published in high impact journals such as Nature family journals. Our published papers have been widely cited.

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