We develop cutting-edge technologies and perform advanced research on III-nitride materials and devices. Based in the Department of Electronic and Electrical Engineering at The University of Sheffield we are keen to share research insights, build successful partnerships and strengthen links with industry and academia.

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Media

Media

Press coverage and features.

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Recent publications

  • Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon, X. Zhao, K. Huang, J. Bruckbauer, S. Shen, C. Zhu, P. Fletcher, P. Feng, Y. Cai, J. Bai, C. Trager-Cowan, R. W. Martin and T. Wang, Scientific Reports, 10, 12650 (2020), doi: 10.1038/s41598-020-69609-4
  • High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission, J. I. H. Haggar, Y. Cai, S. S. Ghataora, R. M. Smith, J. Bai, and T. Wang, ACS Appl. Electron. Mater. 2020, doi: 10.1021/acsaelm.0c00399
  • The 2020 UV Emitter Roadmap, Hiroshi Amano et al, J. Phys. D: Appl. Phys, 2020, doi: 10.1088/1361-6463/aba64c
  • Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon, Y. Cai, S. Shen, C. Zhu, X. Zhao, J. Bai, and T. Wang, ACS Appl. Mater. Interfaces, Just Accepted Manuscript, 14, 6, 6906–6911 (2020), doi: 10.1021/acsami.0c04890

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Working with industry

Working with industry

We offer the full project life cycle for industry collaboration – from design, advanced epitaxy growth, device fabrication and characterisation to testing.

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EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing

You get two degrees from our program – an MSc and a PhD – both are fully funded and include a stipend.

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