in our paper 'Monolithically Integrated μLEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach'
What we do
We develop cutting-edge technologies and perform advanced research on III-nitride materials and devices. Based in the Department of Electronic and Electrical Engineering at The University of Sheffield we are keen to share research insights, build successful partnerships and strengthen links with industry and academia.
Press coverage and features.Read more
- Monolithically Integrated µLEDs/HEMTs Microdisplay on a Single Chip by a Direct Epitaxial Approach Y. Cai, C. Zhu, W. Zhong, P. Feng, S. Jiang, and T. Wang, Adv. Mater. Technol. 2021, 2100214 doi:10.1021/acsaelm.0c00985
- Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth, Y. Cai, J. I. H. Haggar, C. Zhu, P. Feng, J. Bai, and T. Wang, ACS Appl. Electron. Mater, doi: 10.1021/acsaelm.0c00985
- Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon, X. Zhao, K. Huang, J. Bruckbauer, S. Shen, C. Zhu, P. Fletcher, P. Feng, Y. Cai, J. Bai, C. Trager-Cowan, R. W. Martin and T. Wang, Scientific Reports, 10, 12650 (2020), doi: 10.1038/s41598-020-69609-4
- High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission, J. I. H. Haggar, Y. Cai, S. S. Ghataora, R. M. Smith, J. Bai, and T. Wang, ACS Appl. Electron. Mater. 2020, doi: 10.1021/acsaelm.0c00399
We offer the full project life cycle for industry collaboration – from design, advanced epitaxy growth, device fabrication and characterisation to testing.Read more
EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing
Applications are now open for the 2021 intake. The next deadline is 6th April 2021.