Major breakthroughs in the fabrication of microLEDs
We develop cutting-edge technologies and perform advanced research on III-nitride materials and devices. Based in the Department of Electronic and Electrical Engineering at The University of Sheffield we are keen to share research insights, build successful partnerships and strengthen links with industry and academia.
Press coverage and features.Read more
- Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11–22) green LEDs grown on silicon, X. Zhao, K. Huang, J. Bruckbauer, S. Shen, C. Zhu, P. Fletcher, P. Feng, Y. Cai, J. Bai, C. Trager-Cowan, R. W. Martin and T. Wang, Scientific Reports, 10, 12650 (2020), doi: 10.1038/s41598-020-69609-4
- High Modulation Bandwidth of Semipolar (11–22) InGaN/GaN LEDs with Long Wavelength Emission, J. I. H. Haggar, Y. Cai, S. S. Ghataora, R. M. Smith, J. Bai, and T. Wang, ACS Appl. Electron. Mater. 2020, doi: 10.1021/acsaelm.0c00399
- The 2020 UV Emitter Roadmap, Hiroshi Amano et al, J. Phys. D: Appl. Phys, 2020, doi: 10.1088/1361-6463/aba64c
- Non-polar (11-20) GaN metal-semiconductor-metal photo-detectors with superior performance on silicon, Y. Cai, S. Shen, C. Zhu, X. Zhao, J. Bai, and T. Wang, ACS Appl. Mater. Interfaces, Just Accepted Manuscript, 14, 6, 6906–6911 (2020), doi: 10.1021/acsami.0c04890
View all publications by year...
We offer the full project life cycle for industry collaboration – from design, advanced epitaxy growth, device fabrication and characterisation to testing.Read more
EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing
Applications are now open for the 2021 intake, with our first deadline being 10th January 2021.